Raman study of the A1(LO) phonon in relaxed and pseudomorphic InGaN epilayers

Applied Physics Letters

Volumn 83, Issue 23, 2003, Pages 4761-4763

  Correia, M R ^a   Pereira, S ^a   Pereira, E ^a   Frandon, J ^b   Alves, E ^c  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b Université Paul Sabatier   (France)

^c INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; DEGRADATION; FREQUENCIES; GALLIUM NITRIDE; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; PHONONS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN MEASUREMENT; STRUCTURE (COMPOSITION); SURFACE PHENOMENA; X RAY DIFFRACTION ANALYSIS;

BUFFER LAYERS; PSEUDOMORPHIC EPILAYERS;

EPITAXIAL GROWTH;

EID: 0346306383     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1627941     Document Type: Article

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