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Volumn 46, Issue 5 A, 2007, Pages 2840-2843

Magnesium doping of In-rich InGaN

Author keywords

In rich InGaN; InN; Magnesium doping; Metal organic vapor phase epitaxy; P InGaN

Indexed keywords

ACTIVATION ENERGY; ANNEALING; DOPING (ADDITIVES); HOLE CONCENTRATION; MAGNESIUM; VAPOR PHASE EPITAXY;

EID: 34547918337     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2840     Document Type: Article
Times cited : (34)

References (13)
  • 2
    • 0141608080 scopus 로고    scopus 로고
    • See, for a review, A. G. Bhuiyan, A. Hashimoto, and A. Yamamoto: J. Appl. Phys. 94 (2003) 2779, and references therein.
    • See, for a review, A. G. Bhuiyan, A. Hashimoto, and A. Yamamoto: J. Appl. Phys. 94 (2003) 2779, and references therein.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.