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Volumn 7, Issue 2, 2012, Pages 121-129

Impact of the series resistance in the I-V characteristics of junctionless nanowire transistors and its dependence on the temperature

Author keywords

Incomplete ionization; Junctionless; Series resistance; Zero temperature coefficient

Indexed keywords


EID: 84870043136     PISSN: 18071953     EISSN: 18720234     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (54)

References (26)
  • 16
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    • Determination of gate-bias dependent source/drain series resistance and effective channel length for advanced MOS devices
    • C.S. Ho, Y.C. Lo, Y.H. Chang, and J.J. Liou, "Determination of gate-bias dependent source/drain series resistance and effective channel length for advanced MOS devices, Solid-State Electronics, vol. 50, no. 12, pp.1774-1779, 2006.
    • (2006) Solid-State Electronics , vol.50 , Issue.12 , pp. 1774-1779
    • Ho, C.S.1    Lo, Y.C.2    Chang, Y.H.3    Liou, J.J.4
  • 17
    • 0004587303 scopus 로고
    • Extracting the Series Resistance and Effective Channel Length of Short-Channel MOSFETs at Liquid Nitrogen Temperature
    • pp
    • F.J. Garcia-Sánchez, A. Ortiz-Conde, M. García Núñez, and R.L. Anderson, "Extracting the Series Resistance and Effective Channel Length of Short-Channel MOSFETs at Liquid Nitrogen Temperature", Solid-State Electronics, vol. 37, no. 12, pp. 1943-1948, 1994.
    • (1994) Solid-State Electronics , vol.37 , Issue.12 , pp. 1943-1948
    • Garcia-Sánchez, F.J.1    Ortiz-Conde, A.2    Núñez, M.G.3    Anderson, R.L.4
  • 19
    • 0027580659 scopus 로고
    • Generalized Method for Extraction of MOSFET Source-Drain Series Resistance against temperature
    • A. Emrani, G. Ghibaudo, and F. Balestra, "Generalized Method for Extraction of MOSFET Source-Drain Series Resistance against temperature", Electronics Letters, vol. 29, no. 9, pp. 786-788, 1993.
    • (1993) Electronics Letters , vol.29 , Issue.9 , pp. 786-788
    • Emrani, A.1    Ghibaudo, G.2    Balestra, F.3
  • 24
    • 42549101378 scopus 로고    scopus 로고
    • Physical Model of Incomplete Ionization for Silicon Device Simulation
    • pp
    • A. Schenk, P.P. Altermatt, and B. Schmithüsen, "Physical Model of Incomplete Ionization for Silicon Device Simulation", In: Proc. SISPAD, pp. 51-54, 2006.
    • (2006) Proc. SISPAD , pp. 51-54
    • Schenk, A.1    Altermatt, P.P.2    Schmithüsen, B.3
  • 25
    • 33845762895 scopus 로고    scopus 로고
    • A simulation model for the density of states and for incomplete ionization in crystalline silicon. II. Investigation of Si:As and Si:B and usage in device simulation
    • P.P. Altermatt, A. Schenk, B. Schmithüsen, and G. Heiser, "A simulation model for the density of states and for incomplete ionization in crystalline silicon. II. Investigation of Si:As and Si:B and usage in device simulation", Journal of Applied Physics, vol. 100, pp. 113715, 2006.
    • (2006) Journal of Applied Physics , vol.100 , pp. 113715
    • Altermatt, P.P.1    Schenk, A.2    Schmithüsen, B.3    Heiser, G.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.