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International Journal of Electrochemical Science

Volumn 7, Issue 10, 2012, Pages 10038-10046

Enhancement of structural and optical properties of porous in0.27Ga0.73N thin film synthesized using electrochemical etching technique

(3) Abud, Saleh H a,b Hassan, Z a Yam, F K a

a SCHOOL OF PHYSICS (Malaysia)

b UNIVERSITY OF KUFA (Iraq)

Author keywords

HR XRD; PA MBE; Photoluminescence; Porous InGaN

Indexed keywords

EID: 84872960922 PISSN: None EISSN: 14523981 Source Type: Journal
DOI: None Document Type: Article

Times cited : (16)

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