A study of indium incorporation in In-rich InGaN grown by MOVPE

Applied Surface Science

Volumn 256, Issue 10, 2010, Pages 3352-3356

  Guo, Y ^a   Liu, X L ^a   Song, H P ^a   Yang, A L ^a   Xu, X Q ^a   Zheng, G L ^a   Wei, H Y ^a   Yang, S Y ^a   Zhu, Q S ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

In rich InGaN; Indium incorporation; MOVPE

Indexed keywords

GALLIUM ALLOYS; III-V SEMICONDUCTORS; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; SEMICONDUCTOR ALLOYS;

GROWTH PARAMETERS; INDIUM CONTENT; LOW PRESSURES; NUMBER OF FACTORS; SINGLE PHASE; SUBSTRATE TEMPERATURE; TRIMETHYLINDIUM; V/III RATIO;

INDIUM ALLOYS;

EID: 77349095425     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.11.081     Document Type: Article

References (29)

1. Mukose K., and Sano M. Theoretical study of composition fluctuation in InGaN films on various substrates. J. Phys.: Conf. Ser. 152 (2009) 012025
2. Wu J., Walukiewicz W., Yu K.M., Shan W., and Ager III J.W. Superior radiation resistance of InGaN alloys: full-solar-spectrum photovoltaic material system. J. Appl. Phys. 94 (2003) 2452
3. Wakahara A., Tokuda T., Dang X.-Z., Noda S., and Sasaki A. Compositional inhomogeneity and immiscibility of a GaInN ternary alloy. Appl. Phys. Lett. 71 (1997) 906
4. Ho I.-H., and Stringfellow G.B. Solid phase immiscibility in GaInN. Appl. Phys. Lett. 69 (1996) 2701
5. Sun Y.J., Brandt O., Jenichen B., and Ploog K.H. In surface segregation in M-plane (In,Ga)N/GaN multiple quantum well structures. Appl. Phys. Lett. 83 (2003) 5178
6. Komaki H., Nakamura T., Katayama R., Onabe K., Ozeki M., and Ikari T. Growth of In-rich InGaN films on sapphire via GaN layer by RF-MBE. J. Cryst. Growth 310-302 (2007) 437-477
7. Storm D.F., Adelmann C., and Daudin B. Incorporation kinetics of indium in indium gallium nitride at low temperature. Appl. Phys. Lett. 79 (2001) 1614
8. Kim H.J., Shin Y., Kwon S.-Y., Kim H.J., Choi S., Hong S., Kim C.S., Yoon J.-W., Cheong H., and Yoon E. Compositional analysis of In-rich InGaN layers grown on GaN templates by metalorganic chemical vapor deposition. J. Cryst. Growth 310 (2008) 3004-3008
9. Pantha B.N., Li J., Lin J.Y., and Jiang H.X. Single phase InGaN alloys synetheized by metal organic chemical vapor deposition. Appl. Phys. Lett. 93 (2008) 182107
10. Bosi M., and Fornari R. A study of Indium incorporation efficiency in InaN grown by MOVPE. J. Cryst. Growth 265 (2004) 434-439
11. Botthcer T., Einfeldt S., Kirchner V., Figge S., Heinke H., and Hommel D. Incorporation of indium during molecular beam epitaxy of InGaN. Appl. Phys. Lett. 73 (1998) 3232
12. Holec D., Costa P.M.F.J., Kappers M.J., and Humphreys C.J. Critical thickness calculations for InGaN/GaN. J. Cryst. Growth 303 (2007) 314-317
13. Leyer M., Stellmach J., Meissner Ch., Pristovsek M., and Kneissl M. The critical thickness of InGaN on (0 0 0 1) GaN. J. Cryst. Growth 310 (2008) 4913-4915
14. G.B. Stringfellow, Orgnaometallic Vapor-Phase Epitaxy: Theory and Practice, 1999, pp. 221-222.
15. Shcolz F., Harle V., Steuber F., Bolay H., Dornen A., Kaufmann B., Syganow V., and Hangleiter A. Low pressure MOVPE of GaN and GaInN/GaN heterostrucures. J. Cryst. Growth 176 (1997) 321-324
16. Akasaki I., and Amano H. Crystal growth of column III nitrides and their applications to short wavelength light emitters. J. Cryst. Growth 146 (1995) 455-461
17. El-Masry N.A., Piner E.L., Liu S.X., and Bedair S.M. Phase separation in InGaN grown by metalorganic chemical vapor deposition. Appl. Phys. Lett. 72 (1997) 40
18. Singh R., Doppalapudi D., Moustakas T.D., and Romano L.T. Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition. Appl. Phys. Lett. 70 (1997) 1089
19. Chaly V.P., Borisov B.A., Demidov D.M., Krasovitsky D.M., Pogorelsky Yu.V., Shkurko A.P., Sokolov I.A., and Karpov S.Yu. Indium droplet formation during molecular beam epitaxy of InGaN. J. Cryst. Growth 206 (1999) 147
20. Karpov S.Yu., Talalaev R.A., Evstratov I.Yu., and Makarov Yu.N. Indium segregation kinetics in MOVPE of InGaN-based heterostructures. Phys. Stat. Sol. A 192 (2002) 417
21. Lu H., Thothathiri M., Wu Z., and Bhat I. Study of indium droplets formation on the InGaN films by single crystal X-ray diffraction. J. Electron. Mater. 26 (1997) 281
22. Strom D.F. Incorporation kinetics of indium and gallium in indium gallium nitride: a phenomenlogical model. J. Appl. Phys. 89 (2001) 2452
23. Da-cheng L., and Shu-kun D. A quasi-thermodynamic model of MOVPE of InGaN. Chin. J. Semicond. 21 (2000) 105-114
24. Yoshimoto N., Matsuoka T., Sasaki T., and Katsui A. Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy. Appl. Phys. Lett. 59 (1991) 2251
25. O'Steen M.L., Fedler F., and Hauenstein R.J. Effect of substrate temperature and V/III flux ratio on In incorporation for InGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy. J. Appl. Phys. 75 (1999) 2280
26. Bord O.V., Talalaev R.A., Karpov S.Yu., and Makarov Yu.N. Indium incorporation and droplet formation during InGaN molecular beam epitaxy. Phys. Stat. Sol. A 176 (1999) 297
27. Talalaev R.A., Yakovlev E.V., Karpov S.Yu., Evstratov I.Yu., Vorobev A.N., and Makarov Yu.N. On the possible origins of low indium incorporation during MOVPE of InGaN. Phys. Stat. Sol. A 176 (1999) 253
28. G.B. Stringfellow, Orgnaometallic Vapor-Phase Epitaxy: Theory and Practice, 1999, pp. 70-72.
29. Koukitu A., Takahashi N., Taki T., and Seki H. Thermodynamic analysis of the MOVPE growth of InGaN. J. Cryst. Growth 170 (1997) 306