Tunable band gaps in graphene/GaN van der Waals heterostructures

Journal of Physics Condensed Matter

Volumn 26, Issue 29, 2014, Pages

  Huang, Le ^a   Yue, Qu ^b   Kang, Jun ^a   Li, Yan ^a   Li, Jingbo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b NATIONAL UNIVERSITY OF DEFENSE TECHNOLOGY   (China)

Author keywords

density functional theory; electric field; electronic properties; tunable band gap; vdW heterostructures

Indexed keywords

DENSITY FUNCTIONAL THEORY; ELECTRIC FIELDS; ELECTRONIC PROPERTIES; GALLIUM NITRIDE; GRAPHENE; VAN DER WAALS FORCES;

BILAYER GRAPHENE; GALLIUM NITRIDES (GAN); OPTOELECTRONIC PROPERTIES; STACKING SEQUENCE; STRUCTURAL AND ELECTRONIC PROPERTIES; SYSTEMATIC STUDY; TUNABLE BAND-GAP; TWO-DIMENSIONAL MATERIALS;

ENERGY GAP;

EID: 84903822416     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/26/29/295304     Document Type: Article

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