High-quality GaN films grown on chemical vapor-deposited graphene films

NPG Asia Materials

Volumn 4, Issue 9, 2012, Pages

  Chung, Kunook ^a   Park, Suk In ^a   Baek, Hyeonjun ^a   Chung, Jin Seok ^b   Yi, Gyu Chul ^a  

^a Seoul National University   (South Korea)

^b Soongsil University   (South Korea)

Author keywords

Amorphous substrate; Gallium nitride; Hybrid heterostructure; Large size graphene film; Light emitting diode

Indexed keywords

AMORPHOUS SILICA; AMORPHOUS SUBSTRATE; EPITAXIAL RELATIONSHIPS; GRAPHENE FILMS; IN-PLANE ORIENTATION; INTERMEDIATE LAYERS; OPTICAL CHARACTERISTICS; ROOM TEMPERATURE;

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; ELECTROLUMINESCENCE; EPITAXIAL FILMS; GALLIUM NITRIDE; GRAPHENE; HETEROJUNCTIONS; LIGHT; LIGHT EMITTING DIODES; SILICA; VAPORS; ZINC OXIDE;

FILM GROWTH;

EID: 84870954237     PISSN: 18844049     EISSN: 18844057     Source Type: Journal    
DOI: 10.1038/am.2012.45     Document Type: Article

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