SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Heinemann, B ^a   Barth, R ^a   Bolze, D ^a   Drews, J ^a   Fischer, G G ^a   Fox, A ^a   Fursenko, O ^a   Grabolla, T ^a   Haak, U ^a   Knoll, D ^a   Kurps, R ^a   Lisker, M ^a   Marschmeyer, S ^a   Rucker H ^a   Schmidt, D ^a   Schmidt, J ^a   Schubert, M A ^a   Tillack, B ^a   Wipf, C ^a   Wolansky, D ^a   Yamamoto, Y ^a   more..

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BASE COMPOSITION; GATE DELAYS; LATERAL DEVICE; RING OSCILLATOR; SALICIDES; SIGE HBTS; SIGE-HBT TECHNOLOGY; THERMAL BUDGET;

ELECTRON DEVICES; OSCILLATORS (ELECTRONIC); SILICON ALLOYS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 79951833140     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703452     Document Type: Conference Paper

References (12)

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