Effects of extreme temperature swings (-55 °C to 250 °C) on silicon nitride active metal brazing substrates

IEEE Transactions on Device and Materials Reliability

Volumn 14, Issue 2, 2014, Pages 751-756

  Fukumoto, Akihisa ^a   Berry, David ^b   Ngo, Khai D T ^b   Lu, Guo Quan ^b  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b Virginia Polytechnic Institute and State University   (United States)

Author keywords

Active metal brazing (AMB); high temperature packaging; power electronic substrates; surface roughening; temperature cycling

Indexed keywords

CERAMIC MATERIALS; COPPER; SILICON; SILICON NITRIDE;

ACTIVE METAL BRAZING; ELECTRONIC SUBSTRATES; HIGH-TEMPERATURE PACKAGING; SURFACE-ROUGHENING; TEMPERATURE CYCLING;

SUBSTRATES;

EID: 84902149319     PISSN: 15304388     EISSN: 15582574     Source Type: Journal    
DOI: 10.1109/TDMR.2014.2320057     Document Type: Article

References (24)

1. F. D. Barlow, III and A. Elshabini, "Copper interconnects for ceramic substrates and packages," in Ceramic Interconnect Technology Handbook, 1st ed. Boca Raton, FL, USA: CRC Press, 2007, p. 335
2. L. Dupont, Z. Khatir, S. Lefebvre, and S. Bontemps, "Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling," Microelectron. Reliab., vol. 46, no. 9-11, pp. 1766-1771, Sep.-Nov. 2006
3. A. Zéanh, O. Dalverny, M. Karama, and A. Bouzourene, "Lifetime and reliability assessment of AlN substrates used in harsh aeronautic environments power switch modules," Adv. Mater. Res., vol. 112, pp. 113-127, 2010
4. Y. Yoshino, H. Ohtsu, and T. Shibata, "Thermally induced failure of copper-bonded alumina substrates for electronic packaging," J. Amer. Ceram. Soc., vol. 75, no. 12, pp. 3353-3357, Dec. 1992
5. J. S. Harder, "Advantages and new development of direct bonded copper substrates," Microelectron. Reliab., vol. 43, no. 3, pp. 359-365, Mar. 2003
6. A. Schletz, M. Nomann, M. Rauch, S. Kraft, and S. Egelkraut, "Reliability of insulating substrates-High temperature power electronics for more electric aircraft," in Proc. 14th Eur. Conf. Power Electron. Appl., 201, pp. 1-7
7. P. Ning et al., "SiC wirebond multichip phase-leg module packaging design and testing for harsh environment," IEEE Trans. Power Electron., vol. 25, no. 1, pp. 16-23, Jan. 2010
8. G. Dong, G. Lei, X. Chen, K. Ngo, and G.-Q. Lu, "Edge tail length effect on reliability of DBC substrates under thermal cycling," Sol. Surf. Mount Technol., vol. 21, no. 3, pp. 10-15, Jun. 2009
9. D. C. Katsis and Y. Zheng, "Development of an extreme temperature range silicon carbide power module for aerospace applications," in IEEE PESC/IEEE Power Electron. Spec. Conf., 2008, pp. 290-294
10. C. Buttay et al., "State of the art of high temperature power electronics," Mater. Sci. Eng. B, vol. 176, no. 4, pp. 283-288, Mar. 2011
11. P. Ning et al., "A novel high-temperature planar package for SiC multichip phase-leg power module," IEEE Trans. Power Electron., vol. 25, no. 8, pp. 2059-2067, Aug. 2010
12. M. J. Palmer et al., "Silicon carbide power modules for high-temperature applications," IEEE Trans. Compon. Packag. Technol., vol. 2, no. 2, pp. 208-216, Feb. 2012
13. T. G. Lei, J. N. Calata, K. D. T. Ngo, and G.-Q. Lu, "Effects of largetemperature cycling range on direct bond aluminum substrate," IEEE Trans. Device Mater. Rel., vol. 9, no. 4, pp. 563-568, Dec. 2009
14. S. Kraft, A. Schletz, andM. Maerz, "Reliability of silver sintering on DBC and DBA substrates for power electronic applications," in Proc. 7th Int. Conf. Integr. Power Electron. Syst., 2012, pp. 1-6
15. M. G. Nicholas, "Active metal brazing," in Joining of Ceramics, 1st ed. London, U. K.: Chapman & Hall, 1990, p. 73
16. M. M. Gauthier, "Active brazing process considerations," in Engineered Materials Handbook Desk Edition. Materials Park, OH, USA: ASM International, 1995, p. 851
17. Curamik Rogers Corporation, Eschenbach, Germany, Si3N4 Substrates. [Online]. Available: http://www.curamik.com/en/products/2/Si3N4-Substrates. aspx
18. KYOCERA, Kyoto, Japan, Copper-Bonded Silicon Nitride Packages for Power Modules. [Online]. Available: http://global. kyocera.com/prdct/semicon/power/ amb/index.html
19. G.-Q. Lu et al., "Emerging lead-free, high-temperature die-attach technology enabled by low-temperature sintering of nanoscale silver pastes," in Proc. Int. Conf. Electron. Packag. Technol. High Density Packag., 2009, pp. 461-466
20. K. Xiao, J. N. Calata, H. Zheng, K. D. T. Ngo, and G.-Q. Lu, "Simplification of the nanosilver sintering process for large-area semiconductor chip bonding: Reduction of hot-pressing temperature below 200 C," IEEE Trans. Compon. Packag. Technol., vol. 3, no. 8, pp. 1271-1278, Aug. 2013
21. D. Raabe, M. Sachtleber, H. Weiland, G. Scheele, and Z. Zhao, "Grainscale micromechanics of polycrystal surfaces during plastic straining," Acta Mater., vol. 51, no. 6, pp. 1539-1568, Apr. 2003
22. M. R. Stout, L. E. Levine, A. Creuziger, and J. B. Hubbard, "The fundamental relationships between grain orientation, deformation-induced surface roughness and strain localization in an aluminum alloy," Mater. Sci. Eng. A, vol. 530, pp. 107-116, Dec. 2011
23. C. A. Harper, "Ceramic materials and properties," in Handbook of Ceramics, Glasses, and Diamonds, 1st ed. New York, NY, USA: McGraw-Hill, 2001, pp. 1. 17, 1. 29, 1. 32.
24. M. Kayama, Y. Kawamura, and T. Kitamura, "Three-dimensional local stress analysis on grain boundaries in polycrystalline material," Int. J. Solids Struct., vol. 44, no. 10, pp. 3267-3277, May 2007.