Simplification of the nanosilver sintering process for large-area semiconductor chip bonding: Reduction of hot-pressing temperature below 200 °c

IEEE Transactions on Components, Packaging and Manufacturing Technology

Volumn 3, Issue 8, 2013, Pages 1271-1278

  Xiao, Kewei ^a   Calata, Jesus N ^a   Zheng, Hanguang ^a   Ngo, Khai D T ^a   Lu, Guo Quan ^a  

^a Virginia Polytechnic Institute and State University   (United States)

Author keywords

Large area die attach; low temperature joining technique (LTJT); nanosilver sintered joint; power electronics packaging

Indexed keywords

DIE-ATTACH; FRACTIONAL FACTORIAL DESIGNS; HOT PRESSING TEMPERATURE; JOINING TECHNIQUES; LOW-TEMPERATURE SINTERING; PROCESSING PARAMETERS; SINTERED JOINT; SINTERING TEMPERATURES;

ATMOSPHERIC PRESSURE; DESIGN OF EXPERIMENTS; DRYING; ELECTRONICS PACKAGING; JOINING; POWER ELECTRONICS; SILVER; TEMPERATURE;

SINTERING;

EID: 84881474146     PISSN: 21563950     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCPMT.2013.2261439     Document Type: Article

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