Red-emitting (λ = 610nm) In0.51Ga0.49N/GaN disk-in-nanowire light emitting diodes on silicon

IEEE Journal of Quantum Electronics

Volumn 50, Issue 7, 2014, Pages 530-537

  Jahangir, Shafat ^a   Schimpke, Tilman ^b   Strassburg, Martin ^b   Grossklaus, Kevin A ^a   Millunchick, Joanna M ^a   Bhattacharya, Pallab ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

deep level traps; disk in nanowires; gallium nitride; Light emitting diode; molecular beam epitaxy

Indexed keywords

EPITAXIAL GROWTH; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY;

DEEP LEVEL TRAP; DISK-IN-NANOWIRES; ELECTRON AND HOLE TRAPS; INTERNAL QUANTUM EFFICIENCY; NANOWIRE COALESCENCES; OUTPUT CHARACTERISTICS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE;

NANOWIRES;

EID: 84902000315     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2014.2323952     Document Type: Article

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