-
1
-
-
84856083856
-
Materials and growth issues for highperformance nonpolar and semipolar light-emitting devices
-
R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, and J. S. Speck, "Materials and growth issues for highperformance nonpolar and semipolar light-emitting devices," Semicond. Sci. Technol. 27(2), 024001 (2011).
-
(2011)
Semicond. Sci. Technol.
, vol.27
, Issue.2
, pp. 024001
-
-
Farrell, R.M.1
Young, E.C.2
Wu, F.3
DenBaars, S.P.4
Speck, J.S.5
-
2
-
-
79959907003
-
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
-
H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, "Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells," Opt. Express 19(S4 Suppl 4), A991-A1007 (2011).
-
(2011)
Opt. Express
, vol.19
, Issue.S4 SUPPL 4
-
-
Zhao, H.1
Liu, G.2
Zhang, J.3
Poplawsky, J.D.4
Dierolf, V.5
Tansu, N.6
-
3
-
-
84255167245
-
Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography
-
G. Liu, H. Zhao, J. Zhang, J. H. Park, L. J. Mawst, and N. Tansu, "Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography," Nanoscale Res. Lett. 6(1), 342 (2011).
-
(2011)
Nanoscale Res. Lett.
, vol.6
, Issue.1
, pp. 342
-
-
Liu, G.1
Zhao, H.2
Zhang, J.3
Park, J.H.4
Mawst, L.J.5
Tansu, N.6
-
4
-
-
84857298604
-
Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes
-
J. Zhang and N. Tansu, "Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes," J. Appl. Phys. 110(11), 113110 (2011).
-
(2011)
J. Appl. Phys.
, vol.110
, Issue.11
, pp. 113110
-
-
Zhang, J.1
Tansu, N.2
-
5
-
-
84855930913
-
444.9 nm semipolar (112) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer
-
P. Shan Hsu, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, "444.9 nm semipolar (112) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer," Appl. Phys. Lett. 100(2), 021104 (2012).
-
(2012)
Appl. Phys. Lett.
, vol.100
, Issue.2
, pp. 021104
-
-
Shan Hsu, P.1
Hardy, M.T.2
Wu, F.3
Koslow, I.4
Young, E.C.5
Romanov, A.E.6
Fujito, K.7
Feezell, D.F.8
DenBaars, S.P.9
Speck, J.S.10
Nakamura, S.11
-
6
-
-
70349306516
-
Metalorganic vapor phase epitaxy of IIINitride light-emitting diodes on nanopatterned AGOG sapphire substrate by abbreviated growth mode
-
Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, "Metalorganic vapor phase epitaxy of IIINitride light-emitting diodes on nanopatterned AGOG sapphire substrate by abbreviated growth mode," IEEE J. Sel. Top. Quantum Electron. 15(4), 1066-1072 (2009).
-
(2009)
IEEE J. Sel. Top. Quantum Electron.
, vol.15
, Issue.4
, pp. 1066-1072
-
-
Ee, Y.K.1
Biser, J.M.2
Cao, W.3
Chan, H.M.4
Vinci, R.P.5
Tansu, N.6
-
7
-
-
79952086228
-
Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes
-
E. Rangel, E. Matioli, Y. S. Choi, C. Weisbuch, J. S. Speck, and E. L. Hu, "Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes," Appl. Phys. Lett. 98(8), 081104 (2011).
-
(2011)
Appl. Phys. Lett.
, vol.98
, Issue.8
, pp. 081104
-
-
Rangel, E.1
Matioli, E.2
Choi, Y.S.3
Weisbuch, C.4
Speck, J.S.5
Hu, E.L.6
-
8
-
-
79952967306
-
Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes
-
H. Zhao, J. Zhang, G. Liu, and N. Tansu, "Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes," Appl. Phys. Lett. 98(15), 151115 (2011).
-
(2011)
Appl. Phys. Lett.
, vol.98
, Issue.15
, pp. 151115
-
-
Zhao, H.1
Zhang, J.2
Liu, G.3
Tansu, N.4
-
9
-
-
77956848619
-
Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers
-
J. Zhang, H. Zhao, and N. Tansu, "Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers," Appl. Phys. Lett. 97(11), 111105 (2010).
-
(2010)
Appl. Phys. Lett.
, vol.97
, Issue.11
, pp. 111105
-
-
Zhang, J.1
Zhao, H.2
Tansu, N.3
-
10
-
-
79955704450
-
Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes
-
J. Zhang, H. Zhao, and N. Tansu, "Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes," Appl. Phys. Lett. 98(25), 251112 (2011).
-
(2011)
Appl. Phys. Lett.
, vol.98
, Issue.25
, pp. 251112
-
-
Zhang, J.1
Zhao, H.2
Tansu, N.3
-
11
-
-
84555197242
-
Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN shortperiod superlattices
-
Y. Taniasu and M. Kasu, "Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN shortperiod superlattices," Appl. Phys. Lett. 99(25), 171111 (2011).
-
(2011)
Appl. Phys. Lett.
, vol.99
, Issue.25
, pp. 171111
-
-
Taniasu, Y.1
Kasu, M.2
-
12
-
-
84863149574
-
Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations
-
E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, "Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations," Appl. Phys. Lett. 100(6), 061111 (2012).
-
(2012)
Appl. Phys. Lett.
, vol.100
, Issue.6
, pp. 061111
-
-
Francesco Pecora, E.1
Zhang, W.2
Yu Nikiforov, A.3
Zhou, L.4
Smith, D.J.5
Yin, J.6
Paiella, R.7
Dal Negro, L.8
Moustakas, T.D.9
-
13
-
-
84857642471
-
-
CRC Press, Taylor and Francis, Chap. 4
-
R. J. Xie, Y. Q. Li, N. Hirosaki, and H. Yamamoto, Nitride Phosphors and Solid State Lighting (CRC Press, Taylor and Francis, 2011), Chap. 4.
-
(2011)
Nitride Phosphors and Solid State Lighting
-
-
Xie, R.J.1
Li, Y.Q.2
Hirosaki, N.3
Yamamoto, H.4
-
14
-
-
4544336641
-
Warm-white light-emitting diode with yellowish orange SiALON ceramic phosphor
-
K. Sakuma, K. Omichi, N. Kimura, M. Ohashi, D. Tanaka, N. Hirosaki, Y. Yamamoto, R.-J. Xie, and T. Suehiro, "Warm-white light-emitting diode with yellowish orange SiALON ceramic phosphor," Opt. Lett. 29(17), 2001- 2003 (2004).
-
(2004)
Opt. Lett.
, vol.29
, Issue.17
, pp. 2001-2003
-
-
Sakuma, K.1
Omichi, K.2
Kimura, N.3
Ohashi, M.4
Tanaka, D.5
Hirosaki, N.6
Yamamoto, Y.7
Xie, R.-J.8
Suehiro, T.9
-
15
-
-
36649001387
-
Silicon-based oxynitride and nitride phosphors for white LEDs-A review
-
R. J. Xie and N. Hirosaki, "Silicon-based oxynitride and nitride phosphors for white LEDs-A review," Sci. Technol. Adv. Mater. 8(7-8), 588-600 (2007).
-
(2007)
Sci. Technol. Adv. Mater.
, vol.8
, Issue.7-8
, pp. 588-600
-
-
Xie, R.J.1
Hirosaki, N.2
-
16
-
-
80051775131
-
Nitridosilicates and oxonitridosilicates: from ceramic materials to structural and functional diversity
-
M. Zeuner, S. Pagano, and W. Schnick, "Nitridosilicates and oxonitridosilicates: from ceramic materials to structural and functional diversity," Angew. Chem. Int. Ed. Engl. 50(34), 7754-7775 (2011).
-
(2011)
Angew. Chem. Int. Ed. Engl.
, vol.50
, Issue.34
, pp. 7754-7775
-
-
Zeuner, M.1
Pagano, S.2
Schnick, W.3
-
19
-
-
0036329514
-
Luminescence Properties of Terbium-, Cerium-, or Europium-Doped α-Sialon Materials
-
W. H. van Krevel, J. W. T. van Rutten, H. Mandal, H. T. Hintzen, and R. Metselaar, "Luminescence Properties of Terbium-, Cerium-, or Europium-Doped α-Sialon Materials," J. Solid State Chem. 165(1), 19-24 (2002).
-
(2002)
J. Solid State Chem.
, vol.165
, Issue.1
, pp. 19-24
-
-
van Krevel, W.H.1
van Rutten, J.W.T.2
Mandal, H.3
Hintzen, H.T.4
Metselaar, R.5
-
21
-
-
3242723470
-
2+-doped Ca-α-SiAlON: A yellow phosphor for white light-emitting diodes
-
2+-doped Ca-α-SiAlON: A yellow phosphor for white light-emitting diodes," Appl. Phys. Lett. 84(26), 5404-5406 (2004).
-
(2004)
Appl. Phys. Lett.
, vol.84
, Issue.26
, pp. 5404-5406
-
-
Xie, R.J.1
Hirosaki, N.2
Sakuma, K.3
Yamamoto, Y.4
Mitomo, M.5
-
22
-
-
0037800293
-
Red-Enhanced white-light-emitting diode using a new red Phosphor
-
M. Yamada, T. Naitou, K. Izuno, H. Tamaki, Y. Murazaki, M. Kameshima, and T. Mukai, "Red-Enhanced white-light-emitting diode using a new red Phosphor," Jpn. J. Appl. Phys. 42(Part 2, No.1A/B), L20-L23 (2003).
-
(2003)
Jpn. J. Appl. Phys
, vol.42
, Issue.PART 2 NO. 1A.B
-
-
Yamada, M.1
Naitou, T.2
Izuno, K.3
Tamaki, H.4
Murazaki, Y.5
Kameshima, M.6
Mukai, T.7
-
26
-
-
33846996784
-
Extrahigh color rendering white light-emitting diode lamps using oxynitride and nitride phosphors excited by blue light-emitting diode
-
N. Kimura, K. Sakuma, S. Hirafune, K. Asano, N. Hirosaki, and R. J. Xie, "Extrahigh color rendering white light-emitting diode lamps using oxynitride and nitride phosphors excited by blue light-emitting diode," Appl. Phys. Lett. 90(5), 051109 (2007).
-
(2007)
Appl. Phys. Lett.
, vol.90
, Issue.5
, pp. 051109
-
-
Kimura, N.1
Sakuma, K.2
Hirafune, S.3
Asano, K.4
Hirosaki, N.5
Xie, R.J.6
-
28
-
-
83755196039
-
2+: An efficient red emitting phosphor for light emitting diode based white lighting
-
2+: An efficient red emitting phosphor for light emitting diode based white lighting," Appl. Phys. Lett. 99(24), 241106 (2011).
-
(2011)
Appl. Phys. Lett.
, vol.99
, Issue.24
, pp. 241106
-
-
Brinkley, S.E.1
Pfaff, N.2
Denault, K.A.3
Zhang, Z.4
Bert Hintzen, H.T.5
Seshadri, R.6
Nakamura, S.7
DenBaars, S.P.8
-
29
-
-
79959861723
-
Patterned structure of remote phosphor for phosphor-converted white LEDs
-
H.-C. Kuo, C.-W. Hung, H.-C. Chen, K.-J. Chen, C.-H. Wang, C.-W. Sher, C.-C. Yeh, C.-C. Lin, C.-H. Chen, and Y.-J. Cheng, "Patterned structure of remote phosphor for phosphor-converted white LEDs," Opt. Express 19(S4 Suppl 4), A930-A936 (2011).
-
(2011)
Opt. Express
, vol.19
, Issue.S4 SUPPL 4
-
-
Kuo, H.-C.1
Hung, C.-W.2
Chen, H.-C.3
Chen, K.-J.4
Wang, C.-H.5
Sher, C.-W.6
Yeh, C.-C.7
Lin, C.-C.8
Chen, C.-H.9
Cheng, Y.-J.10
-
30
-
-
20744458043
-
2+2/3δ (M = Ca, Sr, Ba): A promising class of novel LED Conversion phosphors
-
2+2/3δ (M = Ca, Sr, Ba): A promising class of novel LED Conversion phosphors," Chem. Mater. 17(12), 3242-3248 (2005).
-
(2005)
Chem. Mater.
, vol.17
, Issue.12
, pp. 3242-3248
-
-
Li, Y.Q.1
Delsing, A.C.A.2
de With, G.3
Hintzen, H.T.4
-
31
-
-
33750312321
-
2 doped with divalent rare earth ions
-
2 doped with divalent rare earth ions," J. Lumin. 121(2), 441-449 (2006).
-
(2006)
J. Lumin.
, vol.121
, Issue.2
, pp. 441-449
-
-
Bachmann, V.1
Justel, T.2
Meijerink, A.3
Ronda, C.4
Schmidt, P.J.5
-
32
-
-
61849109203
-
2+ for white light LEDs
-
2+ for white light LEDs," Chem. Mater. 21(2), 316-325 (2009).
-
(2009)
Chem. Mater.
, vol.21
, Issue.2
, pp. 316-325
-
-
Bachmann, V.1
Ronda, C.2
Oeckler, O.3
Schnick, W.4
Meijerink, A.5
-
34
-
-
58949091557
-
2 - A host lattice for rare-earth doped luminescent materials in phosphor-converted (pc)-LEDs
-
2 - A host lattice for rare-earth doped luminescent materials in phosphor-converted (pc)-LEDs," Solid State Sci. 11(2), 537-543 (2009).
-
(2009)
Solid State Sci.
, vol.11
, Issue.2
, pp. 537-543
-
-
Kechele, J.A.1
Oeckler, O.2
Stadler, F.3
Schnick, W.4
-
35
-
-
80052266749
-
2+ - A highly efficient yellow phosphor for pc-LEDs
-
2+ - A highly efficient yellow phosphor for pc-LEDs," Solid State Sci. 13(9), 1769-1778 (2011).
-
(2011)
Solid State Sci
, vol.13
, Issue.9
, pp. 1769-1778
-
-
Seibald, M.1
Oeckler, O.2
Celinski, V.R.3
Schmidt, P.J.4
Tucks, A.5
Schnick, W.6
-
36
-
-
77949570320
-
x as green to yellow-emitting phosphor for blue pumped white LEDs
-
x as green to yellow-emitting phosphor for blue pumped white LEDs," J. Phys. Chem. Solids 71(4), 473-475 (2010).
-
(2010)
J. Phys. Chem. Solids
, vol.71
, Issue.4
, pp. 473-475
-
-
Song, Y.H.1
Park, W.J.2
Yoon, D.H.3
-
37
-
-
80051770246
-
2+ Green oxynitride phosphor: Electron-phonon coupling and thermal quenching behavior
-
2+ Green oxynitride phosphor: Electron-phonon coupling and thermal quenching behavior," J. Electrochem. Soc. 158(8), J246-J249 (2011).
-
(2011)
J. Electrochem. Soc.
, vol.158
, Issue.8
-
-
Fang, Y.C.1
Kao, P.-C.2
Yang, Y.-C.3
Chu, S.-Y.4
-
38
-
-
80051950062
-
3+ ion doping
-
3+ ion doping," J. Phys. D Appl. Phys. 44(35), 355403 (2011).
-
(2011)
J. Phys. D Appl. Phys.
, vol.44
, Issue.35
, pp. 355403
-
-
Yang, L.X.1
Xu, X.2
Hao, L.Y.3
Wang, Y.F.4
Yin, L.J.5
Yang, X.F.6
He, W.7
Li, Q.X.8
-
39
-
-
69149091396
-
2: Redshift and concentration quenching
-
2: Redshift and concentration quenching," J. Appl. Phys. 106(3), 033103 (2009).
-
(2009)
J. Appl. Phys.
, vol.106
, Issue.3
, pp. 033103
-
-
Song, X.1
Fu, R.2
Agathopoulos, S.3
He, H.4
Zhao, X.5
Zhang, S.6
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