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Applied Physics Letters

Volumn 98, Issue 18, 2011, Pages

Barrier height of Pt- Inx Ga1-x N (0≤x≤0.5) nanowire Schottky diodes

(4) Guo, Wei a Banerjee, Animesh a Zhang, Meng a Bhattacharya, Pallab a

a UNIVERSITY OF MICHIGAN (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CAPACITANCE VOLTAGE MEASUREMENTS; PARYLENES; PLANARIZING; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SCHOTTKY; SCHOTTKY CONTACTS; SCHOTTKY DIODES; SILICON SUBSTRATES; TOP SURFACE;

GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; PLATINUM; SCHOTTKY BARRIER DIODES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79957484873 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3579143 Document Type: Article

Times cited : (16)

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