Misorientation defects in coalesced self-catalyzed GaN nanowires

Journal of Crystal Growth

Volumn 371, Issue , 2013, Pages 142-147

  Grossklaus, K A ^a   Banerjee, A ^a   Jahangir, S ^a   Bhattacharya, P ^a   Millunchick, J M ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

A1. Characterization; A3. Molecular beam epitaxy; B1. Nanomaterials; B2. Semiconducting III V materials

Indexed keywords

CATALYSIS; DEFECTS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; NANOWIRES; STACKING FAULTS;

DEFECT CREATION; GAN NANOWIRES; GROWTH CONDITIONS; MIS-ORIENTATION; ROOT CAUSE; SELF-CATALYZED; SI SUBSTRATES;

DEFECT STRUCTURES;

EID: 84874720759     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2013.02.019     Document Type: Article

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