GaN growth with low-temperature GaN buffer layers directly on Si(111) by hydride vapour phase epitaxy

Chinese Physics Letters

Volumn 21, Issue 9, 2004, Pages 1825-1827

  Yu, Hui Qiang ^a   Chen, Lin ^a   Zhang, Rong ^a   Xiu, Xiang Qian ^a   Xie, Zi Li ^a   Ye, Yu Da ^a   Gu, Shu Lin ^a   Shen, Bo ^a   Shin, Yi ^a   Zheng, You Do ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; GALLIUM NITRIDE; HYDRIDES; III-V SEMICONDUCTORS; SAPPHIRE; SILICON COMPOUNDS; SURFACE ROUGHNESS; VAPOR PHASE EPITAXY;

BAND-EDGE EMISSIONS; DEPOSITION TEMPERATURES; GAN BUFFER LAYERS; GAN FILM; GAN GROWTH; GAN LAYERS; HYDRIDE VAPOR PHASE EPITAXY; LOWS-TEMPERATURES; REACTIVE GAS; YELLOW LUMINESCENCE BANDS;

TEMPERATURE;

EID: 4444275388     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/21/9/042     Document Type: Article

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