The growth of high-quality and self-separation GaN thick-films by hydride vapor phase epitaxy

Journal of Crystal Growth

Volumn 340, Issue 1, 2012, Pages 18-22

  Luo, Weike ^a   Wu, Jiejun ^a   Goldsmith, John ^b   Du, Yanhao ^a   Yu, Tongjun ^a   Yang, Zhijian ^a   Zhang, Guoyi ^a  

^a PEKING UNIVERSITY   (China)

^b Sino Nitride Semiconductor LTD   (China)

Author keywords

A1. Self separation; A1. Stress; A2. Pulsed flow modulate; A3. Hydride vapor phase epitaxy; B1. Gallium nitride

Indexed keywords

A1. SELF-SEPARATION; A2. PULSED FLOW MODULATE; BULK CRYSTALS; CRYSTAL QUALITIES; FLOW MODULATIONS; GAN LAYERS; HIGH GROWTH TEMPERATURES; HIGH QUALITY; HYDRIDE VAPOR PHASE EPITAXY; LOW STRESS; REFLECTION PLANE; SAPPHIRE SUBSTRATES; SEPARATION MECHANISM; THICK LAYERS; TWO-STATE; X RAY ROCKING CURVE;

CRACKS; GALLIUM NITRIDE; HYDRIDES; PULSE TIME MODULATION; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; VAPORS;

VAPOR PHASE EPITAXY;

EID: 84855875380     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.11.037     Document Type: Article

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