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Journal of Crystal Growth

Volumn 231, Issue 3, 2001, Pages 342-351

The impact of initial growth and substrate nitridation on thick GaN growth on sapphire by hydride vapor phase epitaxy

(7) Gu, Shulin a Zhang, Rong a Shi, Yi a Zheng, Youdou a Zhang, Ling b Dwikusuma, F b Kuech, T F b

a NANJING UNIVERSITY (China)

b University of Wisconsin Madison (United States)

Author keywords

A1. Nucleation; A3. Hydride vapor phase epitaxy; B1. Nitrides

Indexed keywords

GALLIUM NITRIDE; INTERFACIAL ENERGY; NITRIDING; NUCLEATION; SAPPHIRE; SEMICONDUCTOR GROWTH; SUBSTRATES; THICK FILMS; VAPOR PHASE EPITAXY;

HYDRIDE VAPOR PHASE EPITAXY;

SEMICONDUCTING FILMS;

EID: 0035480377 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01464-6 Document Type: Conference Paper

Times cited : (31)

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