Evolution of stress in GaN heteroepitaxy on AIN/Si(111): From hydrostatic compressive to biaxial tensile

Applied Physics Letters

Volumn 85, Issue 16, 2004, Pages 3441-3443

  Krost, A ^a   Dadgar, A ^a   Blasing J ^a   Diez, A ^a   Hempel, T ^a   Petzold, S ^a   Christen, J ^a   Clos, R ^a  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; INTERDIFFUSION (SOLIDS); METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SILICON; TENSILE STRESS; X RAY DIFFRACTION ANALYSIS;

FIELD EMISSION SCANNING ELECTRON MICROSCOPY; GRAZING INCIDENCE X-RAY DIFFRACTION (GIXRD); MICRO-PHOTOLUMINESCENCE; OPTICAL RAMAN MODES;

GALLIUM NITRIDE;

EID: 9744235815     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1808237     Document Type: Article

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