A microstructural approach toward the effect of thickness on semiconductor-to-metal transition characteristics of VO2 epilayers

Journal of Applied Physics

Volumn 115, Issue 16, 2014, Pages

  Molaei, R ^a   Bayati, R ^b   Wu, F ^a   Narayan, J ^a  

^a North Carolina State University   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPILAYERS; EPITAXIAL GROWTH; GRAIN BOUNDARIES; PULSED LASER DEPOSITION; SILICON;

EPITAXIAL RELATIONSHIPS; EPITAXIAL THIN FILMS; IN-PLANE ORIENTATION; ORDERS OF MAGNITUDE; PULSED-LASER DEPOSITION TECHNIQUE; SEMICONDUCTOR-TO-METAL TRANSITIONS; STRAIN CHARACTERISTICS; TRANSITION AMPLITUDES;

SEMICONDUCTING SILICON;

EID: 84900013179     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4872030     Document Type: Article

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