VO 2 thin films: Defect Mediation In Room Temperature Ferromagnetic Switching Characteristics

JOM

Volumn 63, Issue 10, 2011, Pages 29-33

  Nori, Sudhakar ^a   Yang, T H ^a   Narayan, Jagdish ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT CONDITIONS; C-SAPPHIRE; CHARGE DEFECTS; DOMAIN MATCHING EPITAXY; ELECTRICAL TRANSITION; FERROMAGNETIC PROPERTIES; HIGH QUALITY; MAGNETIZATION DATA; MULTIFUNCTIONAL DEVICES; OXYGEN PARTIAL PRESSURE; PARAMAGNETIC TRANSITION; ROOM TEMPERATURE; ROOM TEMPERATURE FERROMAGNETISM; SATURATED MAGNETIZATION; SWITCHING CHARACTERISTICS; UNPAIRED ELECTRONS; VANADIUM DIOXIDE; VANADIUM OXIDES;

ELECTRIC PROPERTIES; EPITAXIAL GROWTH; FERROMAGNETIC MATERIALS; FERROMAGNETISM; MAGNETIZATION; OXIDE FILMS; PARAMAGNETISM; SAPPHIRE; SOLID STATE DEVICES; VANADIUM; VANADIUM COMPOUNDS;

EPITAXIAL FILMS;

EID: 84555197009     PISSN: 10474838     EISSN: 15431851     Source Type: Journal    
DOI: 10.1007/s11837-011-0170-7     Document Type: Review

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