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Volumn 61, Issue 20, 2013, Pages 7805-7815
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Correlation between structure and semiconductor-to-metal transition characteristics of VO2/TiO2/sapphire thin film heterostructures
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Author keywords
Epitaxy; Semiconductor to metal transition; Strain; TiO2; VO2
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Indexed keywords
CONTROLLED ORIENTATION;
HIGH RESOLUTION X RAY DIFFRACTION;
MICRO-STRUCTURAL CHARACTERISTICS;
OUT-OF-PLANE ORIENTATION;
SEMICONDUCTOR-TO-METAL TRANSITIONS;
STRUCTURAL INVESTIGATION;
TIO;
VO2;
CRYSTALLINE MATERIALS;
EPITAXIAL GROWTH;
HETEROJUNCTIONS;
INTERFACES (MATERIALS);
STRAIN;
THIN FILMS;
TITANIUM DIOXIDE;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION;
SAPPHIRE;
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EID: 84886265976
PISSN: 13596454
EISSN: None
Source Type: Journal
DOI: 10.1016/j.actamat.2013.09.019 Document Type: Article |
Times cited : (50)
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References (29)
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