Near bulk semiconductor to metal transition in epitaxial VO2 thin films

Applied Physics Letters

Volumn 97, Issue 15, 2010, Pages

  Gupta, Alok ^a   Narayan, Jagdish ^a   Dutta, Titas ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SEMICONDUCTORS; C-PLANE SAPPHIRE SUBSTRATES; C-SAPPHIRE; DOMAIN MATCHING EPITAXY; ELECTRICAL RESISTANCES; GAUSSIAN FITS; HETEROSTRUCTURES; IN-PLANE ORIENTATION; IN-SITU; INTEGRAL MULTIPLES; MISFIT STRAINS; ORIENTATION RELATIONSHIP; POLE FIGURE; PULSED-LASER DEPOSITION TECHNIQUE; SEMICONDUCTOR-TO-METAL TRANSITIONS; STRUCTURAL CHARACTERIZATION; TEMPERATURE DEPENDENCE; TEMPERATURE VALUES; TRANSITION WIDTHS;

BUFFER LAYERS; EPITAXIAL GROWTH; EPITAXIAL LAYERS; HETEROJUNCTIONS; OPTICAL WAVEGUIDES; PULSED LASER DEPOSITION; SAPPHIRE; SUBSTRATES; VAPOR DEPOSITION;

SINGLE CRYSTALS;

EID: 77958106375     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3503632     Document Type: Article

References (13)

1. F. J. Morin, Phys. Rev. Lett. PRLTAO 0031-9007 3, 34 (1959). 10.1103/PhysRevLett.3.34
2. J. B. Goodenough, J. Solid State Chem. JSSCBI 0022-4596 3, 490 (1971). 10.1016/0022-4596(71)90091-0
3. J. Nag and R. F. Haglund, Jr., J. Phys.: Condens. Matter JCOMEL 0953-8984 20, 264016 (2008). 10.1088/0953-8984/20/26/264016
4. M. F. Becker, A. B. Buckman, R. M. Walser, T. Lepine, P. Georges, and A. Brun, Appl. Phys. Lett. APPLAB 0003-6951 65, 1507 (1994). 10.1063/1.112974
5. G. Stefanovich, A. L. Pergament, and D. Stefanovich, J. Phys.: Condens. Matter JCOMEL 0953-8984 12, 8837 (2000). 10.1088/0953-8984/12/41/310 (Pubitemid 32027255)
6. Y. Muraoka and Z. Hiroi, Appl. Phys. Lett. APPLAB 0003-6951 80, 583 (2002). 10.1063/1.1446215 (Pubitemid 34148239)
7. C. Blaauw, F. Leenhouts, F. van der Woude, and G. A. Sawatzky, J. Phys. C JPSOAW 0022-3719 8, 459 (1975). 10.1088/0022-3719/8/4/014
8. H. Sato, T. Minami, S. Takata, and T. Yamada, Thin Solid Films THSFAP 0040-6090 236, 27 (1993). 10.1016/0040-6090(93)90636-4
9. T. Dutta, P. Gupta, A. Gupta, and J. Narayan, J. Phys. D: Appl. Phys. JPAPBE 0022-3727 43, 105301 (2010). 10.1088/0022-3727/43/10/105301
10. A. Gupta, R. Aggarwal, P. Gupta, T. Dutta, R. J. Narayan, and J. Narayan, Appl. Phys. Lett. APPLAB 0003-6951 95, 111915 (2009). 10.1063/1.3232241
11. J. Narayan and B. C. Larson, J. Appl. Phys. JAPIAU 0021-8979 93, 278 (2003). 10.1063/1.1528301
12. D. Brassard, S. Fourmaux, M. Jean-Jacques, J. C. Kieffer, and M. A. El Khakani, Appl. Phys. Lett. APPLAB 0003-6951 87, 051910 (2005). 10.1063/1.2001139
13. T. -H. Yang, R. Aggarwal, A. Gupta, H. Zhou, R. J. Narayan, and J. Narayan, J. Appl. Phys. JAPIAU 0021-8979 107, 053514 (2010). 10.1063/1.3327241