Nonhysteretic phenomena in the metal- Semiconductor phasetransition loop of VO2 films for bolometric sensor applications

IEEE Transactions on Nanotechnology

Volumn 9, Issue 5, 2010, Pages 647-652

  Gurvitch, Michael ^a   Luryi, Serge ^a,b   Polyakov, Aleksandr ^a   Shabalov, Alexander ^a  

^a STONY BROOK UNIVERSITY   (United States)

^b Stony Brook University   (United States)

Author keywords

Bolometers; Hysteresis; Image sensors; Metal insulator transition; Vanadium dioxide

Indexed keywords

HIGHER TEMPERATURES; LOW RESISTANCE; LOW RESISTIVITY; METAL INSULATORS; METALLIC PHASIS; MICROBOLOMETER; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; SCALE MIXTURES; SEMICONDUCTOR-TO-METAL PHASE TRANSITION; SENSOR APPLICATIONS; TEMPERATURE INTERVALS; TEMPERATURE RANGE; UNCOOLED; VANADIUM DIOXIDE; VISUALIZATION TECHNOLOGIES;

BOLOMETERS; DATA STRUCTURES; HYSTERESIS; IMAGE SENSORS; INFRARED DETECTORS; METAL INSULATOR BOUNDARIES; METALS; VANADIUM; VANADIUM ALLOYS; VANADIUM COMPOUNDS; VISUALIZATION;

METAL INSULATOR TRANSITION;

EID: 77956633327     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2010.2047867     Document Type: Conference Paper

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