Strain-induced tuning of metal-insulator transition in NdNiO3

Applied Physics Letters

Volumn 80, Issue 21, 2002, Pages 4039-4041

  Tiwari, Ashutosh ^a   Jin, C ^a   Narayan, J ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL TRANSPORT PROPERTIES; EPITAXIAL STRAIN; M-I TRANSITION; METAL INSULATORS; MICRO-ELECTRONIC DEVICES; SI (100) SUBSTRATE; SYSTEMATIC VARIATION; TEMPERATURE RANGE; THICKNESS OF FILMS;

BUFFER LAYERS; ELECTRIC PROPERTIES; EPITAXIAL FILMS; EPITAXIAL GROWTH; LATTICE MISMATCH; METAL INSULATOR BOUNDARIES; MICROELECTRONICS; OPTICAL WAVEGUIDES; PEROVSKITE; SEMICONDUCTOR INSULATOR BOUNDARIES; TEMPERATURE; TRANSPORT PROPERTIES;

METAL INSULATOR TRANSITION;

EID: 79956054467     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1480475     Document Type: Article

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