Synthesis and characterization of size-controlled vanadium dioxide nanocrystals in a fused silica matrix

Journal of Applied Physics

Volumn 92, Issue 7, 2002, Pages 4031-4036

  Lopez, R ^a   Boatner, L A ^a   Haynes, T E ^a   Feldman, L C ^b   Haglund Jr , R F ^b  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CO-IMPLANTATION; HYSTERESIS BEHAVIOR; METALLIC PHASE; NANOCRYSTAL SIZES; NEAR INFRARED REGION; OXYGEN IONS; PHYSICAL MECHANISM; SEMICONDUCTOR-TO-METAL PHASE TRANSITION; SILICA MATRIX; TITANIUM ALTERS; VANADIUM DIOXIDE;

BEHAVIORAL RESEARCH; HYSTERESIS; NANOCRYSTALS; SEMICONDUCTOR DOPING; TITANIUM;

VANADIUM;

EID: 18644371954     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1503391     Document Type: Article

References (30)

1. F. J. Morin, Phys. Rev. Lett. 3, 34 (1959). prl PRLTAO 0031-9007
2. D. Kucharczyk and T. Niklewski, J. Appl. Crystallogr. 12, 370 (1979). acr JACGAR 0021-8898
3. P. J. Hood and J. F. Natale, J. Appl. Phys. 70, 376 (1991). jap JAPIAU 0021-8979
4. B. Felde, W. Neissner, D. Schalch, A. Sharmann, and M. Werling, Thin Solid Films 305, 61 (1997). tsf THSFAP 0040-6090
5. C. G. Granqvist, Phys. Scr. 32, 401 (1985). phs PHSTBO 0031-8949
6. M. Fukuma, S. Zembutsu, and S. Miyazawa, Appl. Opt. 22, 265 (1983). apo APOPAI 0003-6935
7. W. R. Roach, Appl. Phys. Lett. 19, 453 (1971). apl APPLAB 0003-6951
8. C. E. Lee, R. A. Atkins, W. N. Giler, and H. F. Taylor, Appl. Opt. 28, 4511 (1989). apo APOPAI 0003-6935
9. J. S. Chivian, W. E. Case, and D. H. Rester, IEEE J. Quantum Electron. QE-15, 1326 (1979). ejq IEJQA7 0018-9197
10. M. A. Richardson and J. A. Coath, Opt. Laser Technol. 30, 137 (1998). olt OLTCAS 0030-3992
11. M. F. Becker, A. B. Buckman, R. M. Wasler, T. Lepine, and P. Georges, Proc. SPIE 2189, 400 (1994). spi PSISDG 0277-786X
12. R. Lopez, L. A. Boatner, L. C. Feldman, R. F. Haglund, Jr., and T. E. Haynes, Appl. Phys. Lett. 79, 3161 (2001). apl APPLAB 0003-6951
13. L. A. Gea and L. A. Boatner, Appl. Phys. Lett. 68, 3081 (1996). apl APPLAB 0003-6951
14. M. Borek, F. Quian, V. Nagabushnam, and R. K. Singh, Appl. Phys. Lett. 63, 3288 (1993). apl APPLAB 0003-6951
15. F. Cardillo Case, J. Vac. Sci. Technol. A 2, 1509 (1984). jva JVTAD6 0734-2101
16. J. F. De Natale, P. J. Hood, and A. B. Harker, J. Appl. Phys. 66, 5844 (1989). jap JAPIAU 0021-8979
17. J. F. Ziegler, Transport and Range of Ions in Matter, Ver. 96.01 (IBM Research, Yorktown Heights, NY, 1996).
18. G. Nihuoul, Ch. Leroux, V. Madigou, and J. Durak, Solid State Ionics 117, 105 (1999). ssi SSIOD3 0167-2738
19. J. S. Anderson and A. S. Kahn, J. Less-Common Met. 22, 209 (1970). jco JCOMAH 0022-5088
20. I. Yamaguchi, T. Manabe, T. Kumagai, W. Condo, and S. Mizuta, Thin Solid Films 366, 294 (2000). tsf THSFAP 0040-6090
21. J. B. MacChesney and H. J. Guggenheim, J. Phys. Chem. Solids 30, 225 (1969). jpx JPCSAW 0022-3697
22. J. B. Goodenough, J. Solid State Chem. 3, 490 (1971). jss JSSCBI 0022-4596
23. Crystal Growth: An Introduction, edited by P. Hartman (North Holland, Amsterdam, 1973).
24. L. A. Gea, J. D. Budai, and L. A. Boatner, J. Mater. Res. 14, 2602 (1999). jmr JMREEE 0884-2914
25. C. Blaauw, F. Leenhouts, F. van der Woude, and G. A. Sawatzky, J. Phys. C 8, 459 (1975). jpc JPSOAW 0022-3719
26. F. Beteille, R. Morineau, J. Livage, and M. Nagano, Mater. Res. Bull. 32, 1109 (1997). mrb MRBUAC 0025-5408
27. G. B. Staichowiak and P. G. McCormick, Acta Metall. 36, 291 (1988). ado AMETAR 0001-6160
28. G. B. Olson and M. Cohen, Dislocations in Solids (Elsevier Science, Cambridge, MA, 1986), Vol. 7.
29. C. N. Berglund and A. Jayarama, Phys. Rev. 185, 1034 (1969). phr PHRVAO 0031-899X
30. F. Harbsmeier, J. Conrad, and W. Bolse, Nucl. Instrum. Methods Phys. Res. B 136, 505 (1998). nib NIMBEU 0168-583X