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Applied Physics Letters

Volumn 100, Issue 3, 2012, Pages

Graphene thickness-graded transistors with reduced electronic noise

(4) Liu, Guanxiong a Rumyantsev, Sergey b,c Shur, Michael b Balandin, Alexander A a

a UNIVERSITY OF CALIFORNIA (United States)

b RENSSELAER POLYTECHNIC INSTITUTE (United States)

c IOFFE INSTITUTE (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; DEVICE CHANNEL; ELECTRONIC NOISE; GRAPHENE DEVICES; HIGH ELECTRON MOBILITY; LOWER NOISE; METAL-DOPING; SINGLE LAYER; SOURCE AND DRAINS;

ELECTRON MOBILITY; HIGH ELECTRON MOBILITY TRANSISTORS;

GRAPHENE;

EID: 84863055295 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3676277 Document Type: Article

Times cited : (55)

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