Benchmarking and improving III-V Esaki diode performance with a record 2.2 MA/cm2 peak current density to enhance TFET drive current

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2012, Pages

  Pawlik, D ^a   Romanczyk, B ^a   Thomas, P ^a   Rommel, S ^a   Edirisooriya, M ^b   Contreras Guerrero, R ^b   Droopad, R ^b   Loh, W Y ^c   Wong, M H ^c   Majumdar, K ^c   Wang, W E ^c   Kirsch, P D ^c   Jammy, R ^c  

^a ROCHESTER INSTITUTE OF TECHNOLOGY   (United States)

^b TEXAS STATE UNIVERSITY   (United States)

^c SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENGINEERING; CARRIER TUNNELING; LOGIC APPLICATIONS; PEAK CURRENT DENSITY; PEAK TO VALLEY CURRENT RATIO; SUBTHRESHOLD SLOPE; TECHNOLOGY NODES; TUNNELING FIELD-EFFECT TRANSISTORS;

CURRENT DENSITY; ELECTRON DEVICES; FIELD EFFECT TRANSISTORS; GALLIUM; HETEROJUNCTIONS; TUNNEL DIODES;

BENCHMARKING;

EID: 84876124884     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2012.6479118     Document Type: Conference Paper

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