Universal tunneling behavior in technologically relevant P/N junction diodes

Journal of Applied Physics

Volumn 95, Issue 10, 2004, Pages 5800-5812

  Solomon, Paul M ^a   Jopling, Jason ^b   Frank, David J ^a   D'Emic, Chris ^a   Dokumaci, O ^c   Ronsheim, P ^c   Haensch, W E ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b DUKE UNIVERSITY   (United States)

^c IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; COMPLEMENTARY METAL-OXIDE-SILICON (CMOS); SILICON-ON-INSULATOR (SOI);

BAND STRUCTURE; DOPING (ADDITIVES); ELECTRIC INSULATORS; ELECTRON TUNNELING; ION IMPLANTATION; LEAKAGE CURRENTS; MOSFET DEVICES; SILICON; SUBSTRATES; TUNNEL DIODES; VOLTAGE MEASUREMENT;

SEMICONDUCTOR JUNCTIONS;

EID: 2942541550     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1699487     Document Type: Article

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