-
1
-
-
0030271147
-
A comparative study of advanced MOSFET concepts
-
PII S0018938396072188
-
C. H.Wann, K. Noda, T. Tanaka, M. Yoshida, and C. Hu, "A comparative study of advanced MOSFET concepts," IEEE Trans. Electron Devices, vol. 43, no. 10, pp. 1742-1753, Oct. 1996. (Pubitemid 126769164)
-
(1996)
IEEE Transactions on Electron Devices
, vol.43
, Issue.10
, pp. 1742-1753
-
-
Wann, C.I.I.1
Noda, K.2
Tanaka, T.3
Yoshida, M.4
Hu, C.5
-
2
-
-
0033750493
-
Ultrathin-body SOI MOSFET for deep-sub-tenth micron era
-
May
-
Y.-K. Choi et al., "Ultrathin-body SOI MOSFET for deep-sub-tenth micron era," IEEE Electron Devices Lett., vol. 21, no. 5, pp. 254-255, May 2000.
-
(2000)
IEEE Electron Devices Lett.
, vol.21
, Issue.5
, pp. 254-255
-
-
Choi, Y.-K.1
-
3
-
-
29044440093
-
FinFET-A self-aligned double-gate MOSFET scalable to 20 nm
-
Dec.
-
D. Hisamoto et al., "FinFET-a self-aligned double-gate MOSFET scalable to 20 nm," IEEE Trans. Electron Devices, vol. 47, no. 12, pp. 2320-2325, Dec. 2000.
-
(2000)
IEEE Trans. Electron Devices
, vol.47
, Issue.12
, pp. 2320-2325
-
-
Hisamoto, D.1
-
4
-
-
0036923438
-
FinFET scaling to 10nm gate length
-
B. Yu et al., "FinFET scaling to 10nm gate length," in Proc. IEDM, 2002, pp. 251-254.
-
(2002)
Proc. IEDM
, pp. 251-254
-
-
Yu, B.1
-
5
-
-
77952896966
-
Anomalous lattice vibrations of single-and few-layer MoS2
-
C. Lee, H. Yan, L. E. Brus, T. F. Heinz, J. Hone, and S. Ryu, "Anomalous lattice vibrations of single-and few-layer MoS2," ACS Nano, vol. 4, no. 5, pp. 2695-2700, 2010.
-
(2010)
ACS Nano
, vol.4
, Issue.5
, pp. 2695-2700
-
-
Lee, C.1
Yan, H.2
Brus, L.E.3
Heinz, T.F.4
Hone, J.5
Ryu, S.6
-
6
-
-
77957204738
-
Atomically thin MoS2: A new direct-gap semiconductor
-
K. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, "Atomically thin MoS2: A new direct-gap semiconductor," Phys. Rev. Lett., vol. 105, no. 13, pp. 136805-1-136805-4, 2010.
-
(2010)
Phys. Rev. Lett.
, vol.105
, Issue.13
, pp. 1368051-1368054
-
-
Mak, K.1
Lee, C.2
Hone, J.3
Shan, J.4
Heinz, T.F.5
-
7
-
-
84875773096
-
Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides
-
Mar.
-
H. Terrones, F. López-Urías, and M. Terrones, "Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides," Sci. Rep., vol. 3, p. 1549, Mar. 2013.
-
(2013)
Sci. Rep.
, vol.3
, pp. 1549
-
-
Terrones, H.1
López-Urías, F.2
Terrones, M.3
-
8
-
-
80052090759
-
Performance limits of monolayer transition metal dichalcogenide transistors
-
Sep.
-
L. Liu, S. B. Kumar, Y. Ouyang, and J. Guo, "Performance limits of monolayer transition metal dichalcogenide transistors," IEEE Trans. Electron Devices, vol. 58, no. 9, pp. 3042-3047, Sep. 2011.
-
(2011)
IEEE Trans. Electron Devices
, vol.58
, Issue.9
, pp. 3042-3047
-
-
Liu, L.1
Kumar, S.B.2
Ouyang, Y.3
Guo, J.4
-
9
-
-
80052790285
-
How good can monolayer MoS2 transistors be?
-
Y. Yoon, K. Ganapathi, and S. Salahuddin, "How good can monolayer MoS2 transistors be?" Nano Lett., vol. 11, no. 9, pp. 3768-3773, 2011.
-
(2011)
Nano Lett.
, vol.11
, Issue.9
, pp. 3768-3773
-
-
Yoon, Y.1
Ganapathi, K.2
Salahuddin, S.3
-
10
-
-
84870309390
-
Monolayer MoS2 transistors beyond the technology road map
-
Dec.
-
K. Alam and R. K. Lake, "Monolayer MoS2 transistors beyond the technology road map," IEEE Trans. Electron Devices, vol. 59, no. 12, pp. 3250-3054, Dec. 2012.
-
(2012)
IEEE Trans. Electron Devices
, vol.59
, Issue.12
, pp. 3250-3054
-
-
Alam, K.1
Lake, R.K.2
-
11
-
-
79952406873
-
Single-layer MoS2 transistors
-
Mar.
-
B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, "Single-layer MoS2 transistors," Nat. Nanotechnol., vol. 6, no. 3, pp. 147-150, Mar. 2011.
-
(2011)
Nat. Nanotechnol.
, vol.6
, Issue.3
, pp. 147-150
-
-
Radisavljevic, B.1
Radenovic, A.2
Brivio, J.3
Giacometti, V.4
Kis, A.5
-
12
-
-
67249122406
-
Twoand one-dimensional honeycomb structures of silicon and germanium
-
S. Cahangirov, M. Topsakal, E. Aktürk, H. Sahin, and S. Ciraci, "Twoand one-dimensional honeycomb structures of silicon and germanium," Phys. Rev. Lett., vol. 102, no. 23, p. 236804, 2009.
-
(2009)
Phys. Rev. Lett.
, vol.102
, Issue.23
, pp. 236804
-
-
Cahangirov, S.1
Topsakal, M.2
Aktürk, E.3
Sahin, H.4
Ciraci, S.5
-
13
-
-
84855800482
-
Tunable bandgap in silicene and germanene
-
Feb.
-
Z. Ni et al., "Tunable bandgap in silicene and germanene," Nano Lett., vol. 12, pp. 113-118, Feb. 2012.
-
(2012)
Nano Lett.
, vol.12
, pp. 113-118
-
-
Ni, Z.1
-
14
-
-
84872535226
-
Strain-induced self-doping in silicene and germanene from first-principles
-
Feb.
-
Y. Wang and Y. Ding, "Strain-induced self-doping in silicene and germanene from first-principles," Solid State Commun., vol. 155, pp. 6-11, Feb. 2013.
-
(2013)
Solid State Commun.
, vol.155
, pp. 6-11
-
-
Wang, Y.1
Ding, Y.2
-
15
-
-
77955639982
-
Armchair nanoribbons of silicon and germanium honeycomb structures
-
S. Cahangirov, M. Topsakal, and S. Ciraci, "Armchair nanoribbons of silicon and germanium honeycomb structures," Phys. Rev. B, vol. 81, no. 19, p. 195120, 2010.
-
(2010)
Phys. Rev. B
, vol.81
, Issue.19
, pp. 195120
-
-
Cahangirov, S.1
Topsakal, M.2
Ciraci, S.3
-
16
-
-
84866362063
-
First-principles calculations of mechanical and electronic properties of silicene under strain
-
R. Qin, C.-H.Wang, W. Zhu, and Y. Zhang, "First-principles calculations of mechanical and electronic properties of silicene under strain," AIP Adv., vol. 2, no. 2, p. 022159, 2012.
-
(2012)
AIP Adv.
, vol.2
, Issue.2
, pp. 022159
-
-
Qin, R.1
Wang, C.-H.2
Zhu, W.3
Zhang, Y.4
-
17
-
-
84857702775
-
Electrically tunable band gap in silicene
-
N. D. Drummond, V. Zolyomi, and V. I. Falko, "Electrically tunable band gap in silicene," Phys. Rev. B, vol. 85, no. 7, p. 075423, 2012.
-
(2012)
Phys. Rev. B
, vol.85
, Issue.7
, pp. 075423
-
-
Drummond, N.D.1
Zolyomi, V.2
Falko, V.I.3
-
18
-
-
84875132192
-
Hole doped dirac states in silicene by biaxial tensile strain
-
Mar.
-
T. P. Kaloni, Y. C. Cheng, and U. Schwingenschlögl, "Hole doped dirac states in silicene by biaxial tensile strain," J. Appl. Phys., vol. 113, no. 10, p. 104305, Mar. 2013.
-
(2013)
J. Appl. Phys.
, vol.113
, Issue.10
, pp. 104305
-
-
Kaloni, T.P.1
Cheng, Y.C.2
Schwingenschlögl, U.3
-
19
-
-
84873380848
-
Silicene beyond mono-layers-different stacking configurations and their properties
-
C. Kamal, A. Chakrabarti, A. Banerjee, and S. K. Deb, "Silicene beyond mono-layers-different stacking configurations and their properties," J. Phys. Condens Matter, vol. 25, no. 8, p. 085508, 2013.
-
(2013)
J. Phys. Condens Matter
, vol.25
, Issue.8
, pp. 085508
-
-
Kamal, C.1
Chakrabarti, A.2
Banerjee, A.3
Deb, S.K.4
-
20
-
-
79960208141
-
Ab initio simulations of silicene hydrogenation
-
T. H. Osborn, A. A. Farajian, O. V. Pupysheva, R. S. Aga, and L. C. L. Y. Voon, "Ab initio simulations of silicene hydrogenation," Chem. Phys. Lett., vol. 511, nos. 1-3, pp. 101-105, 2011.
-
(2011)
Chem. Phys. Lett.
, vol.511
, Issue.1-3
, pp. 101-105
-
-
Osborn, T.H.1
Farajian, A.A.2
Pupysheva, O.V.3
Aga, R.S.4
Voon, L.C.L.Y.5
-
21
-
-
84862820772
-
Firstprinciples studies of the hydrogenation effects in silicene sheets
-
P. Zhang, X. D. Li, C. H. Hua, S. Q. Wua, and Z. Z. Zhua, "Firstprinciples studies of the hydrogenation effects in silicene sheets," Phys. Lett. A, vol. 376, no. 14, pp. 1230-1233, 2012.
-
(2012)
Phys. Lett. A
, vol.376
, Issue.14
, pp. 1230-1233
-
-
Zhang, P.1
Li, X.D.2
Hua, C.H.3
Wua, S.Q.4
Zhua, Z.Z.5
-
22
-
-
84863116780
-
First-principles study of ferromagnetism in two-dimensional silicene with hydrogenation
-
C.-W. Zhang and S.-S. Yan, "First-principles study of ferromagnetism in two-dimensional silicene with hydrogenation," J. Phys. Chem. C, vol. 116, no. 46, pp. 4163-4166, 2012.
-
(2012)
J. Phys. Chem. C
, vol.116
, Issue.46
, pp. 4163-4166
-
-
Zhang, C.-W.1
Yan, S.-S.2
-
23
-
-
84878303120
-
Many-body effects in silicene, silicane, germanene and germanane
-
W.Wei, Y. Dai, B. Huanga, and T. Jacob, "Many-body effects in silicene, silicane, germanene and germanane," Phys. Chem. Chem. Phys., vol. 15, no. 22, pp. 8789-8794, 2013.
-
(2013)
Phys. Chem. Chem. Phys.
, vol.15
, Issue.22
, pp. 8789-8794
-
-
Wei, W.1
Dai, Y.2
Huanga, B.3
Jacob, T.4
-
24
-
-
77749297986
-
Electronic properties of two-dimensional hexagonal germanium
-
M. Houssa, G. Pourtois, V. V. Afanasev, and A. Stesmans, "Electronic properties of two-dimensional hexagonal germanium," Appl. Phys. Lett., vol. 96, no. 8, p. 082111, 2010.
-
(2010)
Appl. Phys. Lett.
, vol.96
, Issue.8
, pp. 082111
-
-
Houssa, M.1
Pourtois, G.2
Afanasev, V.V.3
Stesmans, A.4
-
25
-
-
80053585553
-
Electronic and magnetic properties of pristine and chemically functionalized germanene nanoribbons
-
Q. Pang, Y. Zhang, J.-M. Zhang, V. Ji, and K.-W. Xu, "Electronic and magnetic properties of pristine and chemically functionalized germanene nanoribbons," Nanoscale, vol. 3, no. 10, pp. 4330-4338, 2011.
-
(2011)
Nanoscale
, vol.3
, Issue.10
, pp. 4330-4338
-
-
Pang, Q.1
Zhang, Y.2
Zhang, J.-M.3
Ji, V.4
Xu, K.-W.5
-
26
-
-
33845670012
-
Growth of Si nanostructures on Ag(001)
-
C. Leandri et al., "Growth of Si nanostructures on Ag(001)," Surf. Sci., vol. 601, no. 1, pp. 262-267, 2007.
-
(2007)
Surf. Sci.
, vol.601
, Issue.1
, pp. 262-267
-
-
Leandri, C.1
-
27
-
-
77952830220
-
Graphene-like silicon nanoribbons on Ag(110): A possible formation of silicene
-
B. Aufray et al., "Graphene-like silicon nanoribbons on Ag(110): A possible formation of silicene," Appl. Phys. Lett., vol. 96, no. 18, p. 183102, 2010.
-
(2010)
Appl. Phys. Lett.
, vol.96
, Issue.18
, pp. 183102
-
-
Aufray, B.1
-
28
-
-
67650879478
-
Physics of silicene stripes
-
A. Kara et al., "Physics of silicene stripes," J. Supercond. Novel. Magn., vol. 22, no. 3, pp. 259-263, 2009.
-
(2009)
J. Supercond. Novel. Magn.
, vol.22
, Issue.3
, pp. 259-263
-
-
Kara, A.1
-
29
-
-
84859790102
-
Silicene: Compelling experimental evidence for graphenelike two-dimensional silicon
-
Apr.
-
P. Vogt et al., "Silicene: Compelling experimental evidence for graphenelike two-dimensional silicon," Phys. Rev. Lett., vol. 108, no. 15, p. 155501, Apr. 2012.
-
(2012)
Phys. Rev. Lett.
, vol.108
, Issue.15
, pp. 155501
-
-
Vogt, P.1
-
30
-
-
67249137251
-
Soft synthesis of single-crystal silicon monolayer sheets
-
H. Nakano et al., "Soft synthesis of single-crystal silicon monolayer sheets," Angew. Chem., vol. 118, no. 38, pp. 6451-6454, 2006.
-
(2006)
Angew. Chem.
, vol.118
, Issue.38
, pp. 6451-6454
-
-
Nakano, H.1
-
31
-
-
77954326052
-
Evidence of graphene-like electronic signature in silicene nanoribbons
-
P. D. Padova et al., "Evidence of graphene-like electronic signature in silicene nanoribbons," Appl. Phys. Lett., vol. 96, no. 26, p. 261905, 2010.
-
(2010)
Appl. Phys. Lett.
, vol.96
, Issue.26
, pp. 261905
-
-
Padova, P.D.1
-
32
-
-
84861108523
-
1D graphene-like silicon systems: Silicene nano-ribbons
-
P. D. Padova, P. Perfetti, B. Olivieri, C. Quaresima, C. Ottaviani, and G. L. Lay, "1D graphene-like silicon systems: Silicene nano-ribbons," J. Phys. Condensed Matter, vol. 24, no. 22, p. 223001, 2012.
-
(2012)
J. Phys. Condensed Matter
, vol.24
, Issue.22
, pp. 223001
-
-
Padova, P.D.1
Perfetti, P.2
Olivieri, B.3
Quaresima, C.4
Ottaviani, C.5
Lay, G.L.6
-
33
-
-
23144440330
-
In-situ formation of ultrathin Ge nanobelts bonded with nanotubes
-
DOI 10.1021/nl050770e
-
W.-Q. Han, L. Wu, Y. Zhu, and M. Strongin, "In-situ formation of ultrathin ge nanobelts bonded with nanotubes," Nano Lett., vol. 5, no. 7, pp. 1419-1422, 2005. (Pubitemid 41084428)
-
(2005)
Nano Letters
, vol.5
, Issue.7
, pp. 1419-1422
-
-
Han, W.-Q.1
Wu, L.2
Zhu, Y.3
Strongin, M.4
-
34
-
-
84876535705
-
Stability and exfoliation of germanane-A germanium graphane analogue
-
E. Bianco, S. Butler, S. Jiang, O. D. Restrepo, W. Windl, and J. E. Goldberger, "Stability and exfoliation of germanane-A germanium graphane analogue," ACS Nano, vol. 7, no. 5, pp. 4414-4421, 2013.
-
(2013)
ACS Nano
, vol.7
, Issue.5
, pp. 4414-4421
-
-
Bianco, E.1
Butler, S.2
Jiang, S.3
Restrepo, O.D.4
Windl, W.5
Goldberger, J.E.6
-
35
-
-
77958485542
-
Hydrogen compounds of group-IV nanosheets
-
L. C. Lew Yan Voon, E. Sandberg, R. S. Aga, and A. A. Farajian, "Hydrogen compounds of group-IV nanosheets," Appl. Phys. Lett., vol. 97, no. 16, p. 163114, 2010.
-
(2010)
Appl. Phys. Lett.
, vol.97
, Issue.16
, pp. 163114
-
-
Lew Yan Voon, L.C.1
Sandberg, E.2
Aga, R.S.3
Farajian, A.A.4
-
36
-
-
80053606779
-
Group IV graphene-and graphane-like nanosheets
-
Apr.
-
J. C. Garcia, D. B. D. Lima, L. V. C. Assali, and J. F. Justo, "Group IV graphene-and graphane-like nanosheets," J. Phys. Chem. C, vol. 115, pp. 13242-13246, Apr. 2011.
-
(2011)
J. Phys. Chem. C
, vol.115
, pp. 13242-13246
-
-
Garcia, J.C.1
Lima, D.B.D.2
Assali, L.V.C.3
Justo, J.F.4
-
37
-
-
79958836205
-
Electronic properties of hydrogenated silicene and germanene
-
M. Houssa, E. Scalise, K. Sankaran, G. Pourtois, V. V. Afanasev, and A. Stesmans, "Electronic properties of hydrogenated silicene and germanene," Appl. Phys. Lett., vol. 98, no. 22, p. 223107, 2011.
-
(2011)
Appl. Phys. Lett.
, vol.98
, Issue.22
, pp. 223107
-
-
Houssa, M.1
Scalise, E.2
Sankaran, K.3
Pourtois, G.4
Afanasev, V.V.5
Stesmans, A.6
-
38
-
-
84862109235
-
Strong excitons in novel two-dimensional crystals: Silicane and germanane
-
Apr.
-
O. Pulci, P. Gori, M. Marsili, V. Garbuio, R. Del Sole, and F. Bechstedt, "Strong excitons in novel two-dimensional crystals: Silicane and germanane," EPL, vol. 98, p. 37004, Apr. 2012.
-
(2012)
EPL
, vol.98
, pp. 37004
-
-
Pulci, O.1
Gori, P.2
Marsili, M.3
Garbuio, V.4
Del Sole, R.5
Bechstedt, F.6
-
39
-
-
84903971655
-
Silicane and ger-manane: Tight-binding and first-principles studies
-
Jan.
-
V. Z. Olyomi, J. R. Wallbank, and V. I. Falko, "Silicane and ger-manane: Tight-binding and first-principles studies," 2D Mater., Jan. 2014.
-
(2014)
2D Mater.
-
-
Olyomi, V.Z.1
Wallbank, J.R.2
Falko, V.I.3
-
40
-
-
84863182613
-
Induced ferromagnetism in one-side semihydrogenated silicene and germanene
-
X.-Q. Wang, H.-D. Lib, and J.-T. Wanga, "Induced ferromagnetism in one-side semihydrogenated silicene and germanene," Phys. Chem. Chem. Phys., vol. 14, no. 9, pp. 3031-3036, 2012.
-
(2012)
Phys. Chem. Chem. Phys.
, vol.14
, Issue.9
, pp. 3031-3036
-
-
Wang, X.-Q.1
Lib, H.-D.2
Wanga, J.-T.3
-
41
-
-
84870838654
-
Tunable and sizable band gap in silicene by surface adsorption
-
Nov.
-
R. Quhe et al., "Tunable and sizable band gap in silicene by surface adsorption," Sci. Rep., vol. 2, p. 853, Nov. 2012.
-
(2012)
Sci. Rep.
, vol.2
, pp. 853
-
-
Quhe, R.1
-
42
-
-
84870495647
-
Structural, electronic, and transport properties of silicane nanoribbons
-
J. Kim and M. V. Fischetti, "Structural, electronic, and transport properties of silicane nanoribbons," Phys. Rev. B, vol. 86, no. 20, p. 205323, 2012.
-
(2012)
Phys. Rev. B
, vol.86
, Issue.20
, pp. 205323
-
-
Kim, J.1
Fischetti, M.V.2
-
43
-
-
84863297317
-
Electronic structures of silicene fluoride and hydride
-
Y. Ding and Y. Wang, "Electronic structures of silicene fluoride and hydride," Appl. Phys. Lett., vol. 100, no. 8, p. 083102, 2012.
-
(2012)
Appl. Phys. Lett.
, vol.100
, Issue.8
, pp. 083102
-
-
Ding, Y.1
Wang, Y.2
-
44
-
-
4243943295
-
Generalized gradient approximation made simple
-
J. Perdew, K. Burke, and M. Ernzerhof, "Generalized gradient approximation made simple," Phys. Rev. Lett., vol. 77, no. 18, pp. 3865-3868, 1996. (Pubitemid 126631804)
-
(1996)
Physical Review Letters
, vol.77
, Issue.18
, pp. 3865-3868
-
-
Perdew, J.P.1
Burke, K.2
Ernzerhof, M.3
-
45
-
-
25744460922
-
Projector augmented-wave method
-
P. E. Blochl, "Projector augmented-wave method," Phys. Rev. B, vol. 50, no. 24, p. 17953, 1994.
-
(1994)
Phys. Rev. B
, vol.50
, Issue.24
, pp. 17953
-
-
Blochl, P.E.1
-
46
-
-
12844286241
-
Ab initio molecular dynamics for liquid metals
-
G. Kresse and J. Hafner, "Ab initio molecular dynamics for liquid metals," Phys. Rev. B, vol. 47, no. 1, pp. 558-561, 1993.
-
(1993)
Phys. Rev. B
, vol.47
, Issue.1
, pp. 558-561
-
-
Kresse, G.1
Hafner, J.2
-
47
-
-
2442537377
-
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
-
G. Kresse and J. Furthmuller, "Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set," Phys. Rev. B, vol. 54, no. 16, pp. 11169-11186, 1996.
-
(1996)
Phys. Rev. B
, vol.54
, Issue.16
, pp. 11169-11186
-
-
Kresse, G.1
Furthmuller, J.2
-
48
-
-
1842816907
-
Special points for Brillonin-zone integrations
-
H. Monkhorst and J. Pack, "Special points for Brillonin-zone integrations," Phys. Rev. B, vol. 13, no. 12, pp. 5188-5192, 1976.
-
(1976)
Phys. Rev. B
, vol.13
, Issue.12
, pp. 5188-5192
-
-
Monkhorst, H.1
Pack, J.2
-
49
-
-
0041761616
-
Theory of ballistic nanotransistors
-
Sep.
-
A. Rahman, J. Guo, S. Datta, and M. Lundstrom, "Theory of ballistic nanotransistors," IEEE Trans. Electron Devices, vol. 50, no. 9, pp. 1853-1864, Sep. 2003.
-
(2003)
IEEE Trans. Electron Devices
, vol.50
, Issue.9
, pp. 1853-1864
-
-
Rahman, A.1
Guo, J.2
Datta, S.3
Lundstrom, M.4
-
50
-
-
36449008742
-
Ballistic metal-oxide-semiconductor field effect transistor
-
K. Natori, "Ballistic metal-oxide-semiconductor field effect transistor," J. Appl. Phys., vol. 76, no. 8, pp. 4879-4890, 1994.
-
(1994)
J. Appl. Phys.
, vol.76
, Issue.8
, pp. 4879-4890
-
-
Natori, K.1
-
51
-
-
84862811838
-
On the interpretation of ballistic injection velocity in deeply scaled MOSFETs
-
Apr.
-
Y. Liu, M. Luisier, A. Majumdar, D. A. Antoniadis, and M. S. Lundstrom, "On the interpretation of ballistic injection velocity in deeply scaled MOSFETs," IEEE Trans. Electron Devices, vol. 59, no. 4, pp. 994-1001, Apr. 2012.
-
(2012)
IEEE Trans. Electron Devices
, vol.59
, Issue.4
, pp. 994-1001
-
-
Liu, Y.1
Luisier, M.2
Majumdar, A.3
Antoniadis, D.A.4
Lundstrom, M.S.5
-
52
-
-
84875198364
-
Thermoelectric performance of MX2 (M = Mo, W; X = S, Se) monolayer
-
W. Huang, H. Da, and G. Liang, "Thermoelectric performance of MX2 (M = Mo, W; X = S, Se) monolayer," J. Appl. Phys., vol. 113, no. 8, p. 104304, 2013.
-
(2013)
J. Appl. Phys.
, vol.113
, Issue.8
, pp. 104304
-
-
Huang, W.1
Da, H.2
Liang, G.3
-
53
-
-
84895920228
-
Dependence of intrinsic performance of transition metal dichalcogenide transistors on materials and number of layers at the 5 nm channel-length limit
-
V. Mishra, S. Smith, K. Ganapathi, and S. Salahuddin, " Dependence of intrinsic performance of transition metal dichalcogenide transistors on materials and number of layers at the 5 nm channel-length limit," in Proc. IEDM, 2013, pp. 136-139.
-
(2013)
Proc. IEDM
, pp. 136-139
-
-
Mishra, V.1
Smith, S.2
Ganapathi, K.3
Salahuddin, S.4
|