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Nanoscale

Volumn 3, Issue 10, 2011, Pages 4330-4338

Electronic and magnetic properties of pristine and chemically functionalized germanene nanoribbons

(5) Pang, Qing a Zhang, Yan b Zhang, Jian Min a Ji, Vincent b Xu, Ke Wei c

a SHAANXI NORMAL UNIVERSITY (China)

b UNIVERSITÉ PARIS SUD (France)

c XI'AN JIAOTONG UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

AFM-FM TRANSITION; ANTIFERROMAGNETICS; B ATOMS; BAND GAPS; CHEMICALLY DOPED; CO-DOPING; DOUBLE ATOMS; EFFECTIVE CHARGE; ELECTRONIC AND MAGNETIC PROPERTIES; FUNCTIONALIZED; GE ATOM; HALF-METALLIC CHARACTERS; IMPURITY ATOMS; NANORIBBONS; NEGATIVE DIFFERENTIAL RESISTANCES; NONMAGNETICS; POTENTIAL APPLICATIONS; SINGLE ATOMS; SPIN FILTERS; SPIN-POLARIZED;

ANTIFERROMAGNETISM; DENSITY FUNCTIONAL THEORY; FIELD EFFECT TRANSISTORS; MAGNETIC PROPERTIES; POLARIZATION; SEMICONDUCTOR DOPING;

ATOMS;

CARBON NANOTUBE; FULLERENE DERIVATIVE; GERMANIUM; PRISTINE (C60);

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMISTRY; MAGNETISM; SEMICONDUCTOR;

FULLERENES; GERMANIUM; MAGNETICS; MICROSCOPY, ATOMIC FORCE; NANOTUBES, CARBON; SEMICONDUCTORS;

EID: 80053585553 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c1nr10594a Document Type: Article

Times cited : (101)

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