Changes in electrical transport and density of states of phase change materials upon resistance drift

New Journal of Physics

Volumn 16, Issue , 2014, Pages

  Krebs, Daniel ^a   Bachmann, Tobias ^a,c   Jonnalagadda, Prasad ^a   Dellmann, Laurent ^a   Raoux, Simone ^b  

^a IBM RESEARCH ZURICH   (Switzerland)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c UNIVERSITY OF EXETER   (United Kingdom)

Author keywords

conductivity; density of states; electrical transport; phase change materials; photo conductivity; resistance drift; temperature dependence

Indexed keywords

AMORPHOUS MATERIALS; DEFECTS; ELECTRIC CONDUCTIVITY; ELECTRIC CONDUCTIVITY MEASUREMENT; ENERGY GAP; PHASE CHANGE MATERIALS; PHASE CHANGE MEMORY; TEMPERATURE DISTRIBUTION;

DENSITY OF STATE; ELECTRICAL TRANSPORT; ELECTRICAL TRANSPORT PROPERTIES; PHASE-CHANGE MEMORY TECHNOLOGIES; RESISTANCE DRIFTS; TEMPERATURE DEPENDENCE; TEMPERATURE-DEPENDENT CONDUCTIVITY; VARIABLE RANGE HOPPING;

ELECTRIC PROPERTIES;

EID: 84899502995     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/16/4/043015     Document Type: Article

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