SCOPUS 정보 검색 플랫폼

Volumn 20, Issue 28, 2008, Pages

A new procedure for calculating the density and energy distribution of localized hopping sites in disordered semiconductors, using low-temperature electrical conductivity data

(2) Marshall, J M a Main, C b

a SWANSEA UNIVERSITY (United Kingdom)

b UNIVERSITY OF DUNDEE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER TRANSPORT; CIVIL AVIATION; CONCENTRATION (PROCESS); ELECTRIC CONDUCTIVITY; ELECTRIC POWER DISTRIBUTION; ION BEAMS; QUANTUM CHEMISTRY;

CARRIER (CO); CONDUCTIVITY DATA; DENSITY OF STATES (DOF); DISORDERED SEMICONDUCTORS; DISORDERED SOLIDS; ELECTRICAL CONDUCTIVITY; ENERGY DEPENDENT; ENERGY DISTRIBUTIONS; HOPPING SITES; LOCALIZED STATES; LOW TEMPERATURE (LTR); QUANTUM MECHANICAL TUNNELLING; TRANSPORT ENERGY;

CARRIER MOBILITY;

EID: 47249130288 PISSN: 09538984 EISSN: 1361648X Source Type: Journal
DOI: 10.1088/0953-8984/20/28/285210 Document Type: Article

Times cited : (19)

References (14)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.