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Journal of Applied Physics

Volumn 112, Issue 11, 2012, Pages

On the density of states of germanium telluride

(6) Longeaud, C a Luckas, J a,b Krebs, D c Carius, R d Klomfass, J d Wuttig, M b

a UNIV PARIS SUD (France)

b RWTH AACHEN UNIVERSITY (Germany)

c IBM RESEARCH ZURICH (Switzerland)

d FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY OF STATE; GERMANIUM TELLURIDE; MODULATED PHOTOCURRENT; NUMERICAL CALCULATION; PHOTOTHERMAL DEFLECTION SPECTROSCOPY; ROOM TEMPERATURE; SAMPLE RESISTANCE; TRANSPORT PARAMETERS;

GERMANIUM; PHASE CHANGE MATERIALS;

AMORPHOUS FILMS;

EID: 84871198597 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4768725 Document Type: Article

Times cited : (42)

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