In situ SiNx gate dielectric by MOCVD for low-leakage-current ultra-thin-barrier AlN/GaN MISHEMTs on Si

Physica Status Solidi (A) Applications and Materials Science

Volumn 211, Issue 4, 2014, Pages 775-778

  Lu, Xing ^a   Ma, Jun ^a   Liu, Zhaojun ^a   Jiang, Huaxing ^a   Huang, Tongde ^a   Lau, Kei May ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

AlN GaN; low leakage current; MISHEMTs

Indexed keywords

GATE DIELECTRICS; HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIS DEVICES; SILICON;

ALN/GAN; CAPACITANCE VOLTAGE MEASUREMENTS; FREQUENCY-DEPENDENT CONDUCTANCE; LOW-LEAKAGE CURRENT; METAL-INSULATOR-SEMICONDUCTORS; MISHEMTS; REVERSE LEAKAGE CURRENT; SURFACE PASSIVATION EFFECTS;

SILICON NITRIDE;

EID: 84897992941     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201300495     Document Type: Article

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