Direct integration of polycrystalline graphene into light emitting diodes by plasma-assisted metal-catalyst-free synthesis

ACS Nano

Volumn 8, Issue 3, 2014, Pages 2230-2236

  Kim, Yong Seung ^a   Joo, Kisu ^b   Jerng, Sahng Kyoon ^a   Lee, Jae Hong ^a   Moon, Daeyoung ^c   Kim, Jonghak ^c   Yoon, Euijoon ^b,c   Chun, Seung Hyun ^a  

^a Sejong University   (South Korea)

^b Seoul National University   (South Korea)

^c Seoul National University   (South Korea)

Author keywords

graphene; in situ ohmic contact formation; light emitting diodes; metal catalyst free synthesis; plasma enhanced chemical vapor deposition

Indexed keywords

CATALYSTS; ELECTRIC CONTACTORS; ELECTRIC PROPERTIES; GALLIUM NITRIDE; GRAPHITE ELECTRODES; INTEGRATION; LIGHT EMITTING DIODES; METALS; OHMIC CONTACTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

CARBON DIFFUSION; DIRECT INTEGRATION; ELEVATED TEMPERATURE; GRAPHENE ELECTRODES; LOW TEMPERATURES; OHMIC CONTACT FORMATION; POLYCRYSTALLINE GRAPHENE; TRANSFER PROCESS;

GRAPHENE;

EID: 84896956666     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn405477f     Document Type: Article

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