Direct chemical vapor deposition of large-area carbon thin films on gallium nitride for transparent electrodes: A first attempt

IEEE Transactions on Semiconductor Manufacturing

Volumn 25, Issue 3, 2012, Pages 494-501

  Sun, Jie ^a   Cole, Matthew T ^b   Ahmad, S Awais ^a   Bäcke, Olof ^a   Ive, Tommy ^a   Löffler, Markus ^a   Lindvall, Niclas ^a   Olsson, Eva ^a   Teo, Kenneth B K ^c   Liu, Johan ^a   Larsson, Anders ^a   Yurgens, August ^a   Haglund, Åsa ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c AIXTRON Nanoinstruments Ltd   (United Kingdom)

Author keywords

Chemical vapor deposition; GaN; graphene; transparent electrodes

Indexed keywords

CARBON BASED MATERIALS; CARBON THIN FILMS; CHARACTERIZATION METHODS; GAN; HIGH FLOW; III-NITRIDE; METALLIC CATALYSTS; OPTICAL TRANSPARENCY; TRANSPARENT ELECTRODE;

CHEMICAL VAPOR DEPOSITION; ELECTRODES; GRAPHENE; LIGHT EMITTING DIODES; SAPPHIRE; THIN FILMS; VAPORS;

GALLIUM NITRIDE;

EID: 84864681423     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2012.2198676     Document Type: Article

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