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Volumn 11, Issue 4 SUPPL., 2011, Pages
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Thermal degradation in InGaN quantum wells in violet and blue GaN-based laser diodes
a,b
c
a
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Author keywords
GaN; Laser diode (LD); Light emitting diode (LED); Quantum well (QW)
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Indexed keywords
ACTIVE LAYER;
AFM;
BLUE EMISSION;
GAN;
GAN-BASED LASER DIODES;
GROWTH TIME;
HIGH TEMPERATURE;
IN-PHASE;
INGAN QUANTUM WELLS;
INGAN QW;
LASER DIODE (LD);
LASING WAVELENGTH;
LIGHT EMITTING DEVICES;
P-TYPE;
QUANTUM WELL;
SINGLE QUANTUM WELL;
SLOPE EFFICIENCIES;
SURFACE DEGRADATION;
SURFACE MIGRATION;
THERMAL DAMAGE;
THRESHOLD CURRENTS;
DEGRADATION;
DIODES;
ELECTROLUMINESCENCE;
GALLIUM NITRIDE;
LIGHT;
LIGHT EMISSION;
PHASE SEPARATION;
QUANTUM WELL LASERS;
SEMICONDUCTOR QUANTUM WELLS;
SPINODAL DECOMPOSITION;
SURFACE STRUCTURE;
ORGANIC LIGHT EMITTING DIODES (OLED);
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EID: 80455174718
PISSN: 15671739
EISSN: None
Source Type: Journal
DOI: 10.1016/j.cap.2011.07.024 Document Type: Conference Paper |
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Times cited : (12)
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References (13)
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