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Applied Physics Letters

Volumn 104, Issue 9, 2014, Pages

Single-crystal cubic boron nitride thin films grown by ion-beam-assisted molecular beam epitaxy

(5) Hirama, Kazuyuki a Taniyasu, Yoshitaka a Karimoto, Shin Ichi a Krockenberger, Yoshiharu a Yamamoto, Hideki a

a NTT Basic Research Laboratories (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; III-V SEMICONDUCTORS; ION BEAMS; IONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SINGLE CRYSTALS; THIN FILMS;

ACCELERATION VOLTAGES; BONDING CHARACTERISTICS; BORON NITRIDE THIN FILMS; CUBIC BORON NITRIDE (CBN); EPITAXIALLY GROWN; HIGH ACCELERATION; PHASE FORMATIONS; SELECTIVE ETCHING;

CUBIC BORON NITRIDE;

EID: 84896746818 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4867353 Document Type: Article

Times cited : (34)

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