Electroluminescence and capacitance-voltage characteristics of single-crystal n-type AlN (0001)/p-type diamond (111) heterojunction diodes

Applied Physics Letters

Volumn 98, Issue 1, 2011, Pages

  Hirama, Kazuyuki ^a   Taniyasu, Yoshitaka ^a   Kasu, Makoto ^a  

^a Bio Medical Informatics Research Center   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; BAND ALIGNMENTS; CAPACITANCE VOLTAGE CHARACTERISTIC; CAPACITANCE VOLTAGE MEASUREMENTS; CONDUCTION BAND OFFSET; EXCITON RECOMBINATION; HETEROJUNCTION DIODES; METAL-ORGANIC VAPOR PHASE EPITAXY; P-TYPE; ROOM TEMPERATURE; VALENCE BAND OFFSETS;

CAPACITANCE; DIAMONDS; ELECTRON MOBILITY; SEMICONDUCTOR DIODES;

HETEROJUNCTIONS;

EID: 78651329107     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3533380     Document Type: Article

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