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Volumn 108, Issue 1, 2010, Pages

Heterostructure growth of a single-crystal hexagonal AlN (0001) layer on cubic diamond (111) surface

Author keywords

[No Author keywords available]

Indexed keywords

ALN; BOND DENSITIES; CUBIC DIAMOND; EPITAXIAL RELATIONSHIPS; HETERO INTERFACES; HETEROJUNCTION DEVICES; HETEROSTRUCTURES; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPES; IN-PLANE; INTERFACE STRUCTURES; LARGE LATTICE MISMATCH; MISFIT DISLOCATIONS;

EID: 77955203267     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3452362     Document Type: Article
Times cited : (35)

References (20)
  • 2
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    • (2006) Nature , vol.441 , Issue.7091 , pp. 325-328
    • Taniyasu, Y.1    Kasu, M.2    Makimoto, T.3
  • 4
    • 33750743430 scopus 로고    scopus 로고
    • Increased electron mobility in n -type Si-doped AlN by reducing dislocation density
    • DOI 10.1063/1.2378726
    • Y. Taniyasu, M. Kasu, and T. Makimoto, Appl. Phys. Lett. APPLAB 0003-6951 89, 182112 (2006). 10.1063/1.2378726 (Pubitemid 44705702)
    • (2006) Applied Physics Letters , vol.89 , Issue.18 , pp. 182112
    • Taniyasu, Y.1    Kasu, M.2    Makimoto, T.3
  • 7
    • 33745229701 scopus 로고    scopus 로고
    • Highly efficient doping of boron into high-quality homoepitaxial diamond films
    • DOI 10.1016/j.diamond.2006.01.011, PII S0925963506000185
    • T. Teraji, H. Wada, M. Yamamoto, K. Arima, and T. Ito, Diamond Relat. Mater. DRMTE3 0925-9635 15, 602 (2006). 10.1016/j.diamond.2006.01.011 (Pubitemid 43929358)
    • (2006) Diamond and Related Materials , vol.15 , Issue.4-8 , pp. 602-606
    • Teraji, T.1    Wada, H.2    Yamamoto, M.3    Arima, K.4    Ito, T.5
  • 8
    • 48849107625 scopus 로고    scopus 로고
    • DRMTE3 0925-9635, 10.1016/j.diamond.2008.01.054
    • K. Ueda and M. Kasu, Diamond Relat. Mater. DRMTE3 0925-9635 17, 1269 (2008). 10.1016/j.diamond.2008.01.054
    • (2008) Diamond Relat. Mater. , vol.17 , pp. 1269
    • Ueda, K.1    Kasu, M.2
  • 9
    • 77955213754 scopus 로고    scopus 로고
    • Japan Patent No. 324812 (8 November)
    • M. Kasu and N. Kobayashi, Japan Patent No. 324812 (8 November 2002).
    • (2002)
    • Kasu, M.1    Kobayashi, N.2
  • 15
    • 65749100400 scopus 로고    scopus 로고
    • JCRGAE 0022-0248, 10.1016/j.jcrysgro.2009.01.021
    • Y. Taniyasu and M. Kasu, J. Cryst. Growth JCRGAE 0022-0248 311, 2825 (2009). 10.1016/j.jcrysgro.2009.01.021
    • (2009) J. Cryst. Growth , vol.311 , pp. 2825
    • Taniyasu, Y.1    Kasu, M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.