Photosensitive and temperature-dependent I-V characteristics of p-NiO film/n-ZnO nanorod array heterojunction diode

Materials Science and Engineering: B

Volumn 184, Issue 1, 2014, Pages 44-48

  Long, Hao ^a   Ai, Lei ^a   Li, Songzhan ^a,b   Huang, Huihui ^a   Mo, Xiaoming ^a   Wang, Haoning ^a   Chen, Zhao ^a   Liu, Yuping ^a   Fang, Guojia ^a  

^a WUHAN UNIVERSITY   (China)

^b WUHAN TEXTILE UNIVERSITY   (China)

Author keywords

Nanorod; NiO; Photosensitivity; Temperature dependent I V; ZnO

Indexed keywords

GLASS SUBSTRATES; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; LIGHT SENSITIVE MATERIALS; MICROELECTRONICS; NANORODS; PHOTOSENSITIVITY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DIODES; X RAY DIFFRACTION; ZINC OXIDE;

HETEROJUNCTION DIODES; HYDROTHERMAL METHODS; NIO FILMS; RADIO FREQUENCY REACTIVE MAGNETRON SPUTTERING; SIMPLE++; TEMPERATURE DEPENDENT; TEMPERATURE DEPENDENT I-V CHARACTERISTICS; TEMPERATURE-DEPENDENT I-V; ZNO NANORODS ARRAYS; ZNO:AL;

NICKEL OXIDE;

EID: 84894031349     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2014.01.001     Document Type: Article

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