Field-effect transistor based on ZnO nanorods with a variable threshold cutoff voltage

Semiconductors

Volumn 47, Issue 4, 2013, Pages 538-542

  Gruzintsev, A N ^a   Redkin, A N ^a   Opoku, C ^b   Shkunov, M N ^a  

^a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^b UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84876426621     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782613040106     Document Type: Article

References (9)

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