Tunable light extraction efficiency of GaN light emitting diodes by ZnO nanorod arrays

Semiconductor Science and Technology

Volumn 24, Issue 10, 2009, Pages

  Chao, C H ^a   Lin, W H ^a   Chen, C H ^b   Changjean, C H ^b   Lin, C F ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b Walsin Lihwa Corp   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FABRY-PEROT RESONANCES; GAN LEDS; GAN LIGHT-EMITTING DIODES; LIGHT INTENSITY; LIGHT-EXTRACTION EFFICIENCY; MEASUREMENT RESULTS; PERIODIC OSCILLATION; ZNO; ZNO NANOROD ARRAYS;

GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; NANORODS; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

EXTRACTION;

EID: 70350662756     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/10/105017     Document Type: Article

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