N-ZnO/p-GaN heterojunction light-emitting diodes with a polarization-induced graded-p-AlxGa1-xN electron-blocking layer

Journal of Physics D: Applied Physics

Volumn 46, Issue 6, 2013, Pages

  Zhang, Hezhi ^a   Shen, Rensheng ^a   Liang, Hongwei ^a,b   Liu, Yuanda ^a   Liu, Yang ^a   Xia, Xiaochuan ^a   Du, Guotong ^a,b  

^a DALIAN UNIVERSITY OF TECHNOLOGY   (China)

^b JILIN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EDGE EMISSIONS; HOLE INJECTION; ULTRAVIOLET EMISSION; ZNO;

ALUMINUM; ELECTRON INJECTION; GALLIUM NITRIDE; HETEROJUNCTIONS; POLARIZATION; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 84873862015     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/46/6/065101     Document Type: Article

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