MBE grown Ga2O3 and its power device applications

Journal of Crystal Growth

Volumn 378, Issue , 2013, Pages 591-595

  Sasaki, Kohei ^a,b   Higashiwaki, Masataka ^b,c   Kuramata, Akito ^a   Masui, Takekazu ^d   Yamakoshi, Shigenobu ^a  

^a TAMURA CORPORATION   (Japan)

^b NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d Koha Co Ltd   (Japan)

Author keywords

Doping; MESFET devices; Molecular beam epitaxy; Schottky barrier diodes; Semiconducting gallium oxide

Indexed keywords

CARRIER CONCENTRATION; DOPING (ADDITIVES); DRAIN CURRENT; ELECTRIC BREAKDOWN; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OXIDE FILMS; POWER SEMICONDUCTOR DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; THICK FILMS;

DEVICE CHARACTERISTICS; GATE-LEAKAGE CURRENT; HIGH BREAKDOWN VOLTAGE; HIGH-POWER DEVICES; HOMOEPITAXIAL LAYERS; IDEALITY FACTORS; OFF-STATE BREAKDOWN VOLTAGES; SCHOTTKY BARRIER DIODES (SBDS);

MESFET DEVICES;

EID: 84885478497     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2013.02.015     Document Type: Article

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