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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 1, 2001, Pages 250-254

Growth of undoped ZnO films with improved electrical properties by radical source molecular beam epitaxy

(9) Nakahara, Ken a Tanabe, Tetsuhiro a Takasu, Hidemi a Fons, Paul b Iwata, Kakuya b Yamada, Akimasa b Matsubara, Koji b Hunger, Ralf b Niki, Shigeru b

a ROHM CO LTD (Japan)

b ELECTROTECHNICAL LABORATORY (Japan)

Author keywords

a plane sapphire; Buffer layer; Electrical property; RS MBE; ZnO

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CARRIER MOBILITY; FILM GROWTH; MOLECULAR BEAM EPITAXY; SAPPHIRE; SECONDARY ION MASS SPECTROMETRY; SINGLE CRYSTALS; SUBSTRATES; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

HALL MEASUREMENT;

OPTICAL FILMS;

EID: 0035062070 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.40.250 Document Type: Article

Times cited : (90)

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