Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3

Applied Physics Letters

Volumn 101, Issue 13, 2012, Pages

  Mohamed, M ^a,c   Irmscher, K ^b   Janowitz, C ^a   Galazka, Z ^b   Manzke, R ^a   Fornari, R ^b  

^a HUMBOLDT UNIVERSITY   (Germany)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^c Assiut University   (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; HIGH-RESOLUTION PHOTOEMISSION SPECTROSCOPY; IMAGE-FORCE EFFECTS; METAL-INDUCED GAP STATE; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY-MOTT RULES; TRANSPARENT SEMICONDUCTING OXIDE;

GALLIUM; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTOR METAL BOUNDARIES;

GOLD DEPOSITS;

EID: 84882347253     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4755770     Document Type: Article

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