Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method

Journal of Applied Physics

Volumn 110, Issue 6, 2011, Pages

  Irmscher, K ^a   Galazka, Z ^a   Pietsch, M ^a   Uecker, R ^a   Fornari, R ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; DEEP ELECTRON TRAPS; DONOR CONCENTRATIONS; EFFECTIVE-MASS THEORY; HALL EFFECT MEASUREMENT; IRIDIUM CRUCIBLE; ROOM TEMPERATURE; SCHOTTKY BARRIER HEIGHTS; TEMPERATURE DEPENDENT; TEMPERATURE-DEPENDENT CONDUCTIVITY; ZERO CONCENTRATION;

ATMOSPHERIC TEMPERATURE; CARBON DIOXIDE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFRACTIVE OPTICS; ELECTRIC PROPERTIES; ELECTRON MOBILITY; ELECTRON TRAPS; ELECTRONS; GALLIUM; HALL EFFECT; HALL MOBILITY; IONIZATION; IRIDIUM; SCHOTTKY BARRIER DIODES;

SINGLE CRYSTALS;

EID: 80053509234     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3642962     Document Type: Article

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