Crystal orientation of β-Ga 2O 3 thin films formed on c-plane and a-plane sapphire substrate

Journal of Crystal Growth

Volumn 349, Issue 1, 2012, Pages 12-18

  Nakagomi, Shinji ^a   Kokubun, Yoshihiro ^a  

^a ISHINOMAKI SENSHU UNIVERSITY   (Japan)

Author keywords

A1. Crystal structure; A1. X ray diffraction; B1. Gallium compounds; B1. Oxides; B1. Sapphire; B2. Semiconducting gallium compounds

Indexed keywords

A-PLANE; A-PLANE SAPPHIRE; C-PLANE SAPPHIRE SUBSTRATES; CRYSTAL MODELS; CRYSTAL TYPES; OXYGEN ATOM; OXYGEN PLASMAS; POLE FIGURE MEASUREMENTS; SAPPHIRE SUBSTRATES;

CRYSTAL ORIENTATION; GALLIUM; GALLIUM COMPOUNDS; OXYGEN; SAPPHIRE; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION;

GALLIUM ALLOYS;

EID: 84860281128     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.04.006     Document Type: Article

References (23)

1. 3 Physics Review 140 1965 A316
2. 3 sensors for reducing gases Sensors and Actuators B 18 1994 119 124
3. 3 phosphors for thin-film electroluminescent devices Japanese Journal of Applied Physics Part 2 36 1997 L1191
4. 3 single crystals Applied Physics Letters 70 1997 3561
5. 3 Applied Physics Letters 88 2006 092106
6. M. Fleischer, W. Hanrieder, and H. Meixner Stability of semiconducting gallium oxide thin films Thin Solid Films 190 1990 93 102
7. G.A. Battiston, R. Gerbasi, M. Porchia, R. Bertoncello, and F. Caccavale Chemical vapour deposition and characterization of gallium oxide thin films Thin Solid Films 279 1996 115 118 (Pubitemid 126356926)
8. 3 thin films Applied Physics Letters 77 2000 4166
9. 3 thin film at low deposition temperatures Thin Solid Films 411 2002 134 139 (Pubitemid 35281623)
10. A. Oritiz, J.C. Alonso, E. Andrade, and C. Urbiola Structural and optical characteristics of gallium oxide thin films deposited by ultrasonic spray pyrolysis Journal of the Electrochemical Society 148 2001 F26
11. 3 thin films with different dopants Sensors and Actuators B 93 2003 431 434
12. 3 thin films for ultraviolet photodetectors Applied Physics letters 90 2007 031912
13. 3 Applied Physics Letters 88 2006 031105
14. 3 Thin Film Growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors Japanese Journal of Applied Physics 46 2007 7217 7220 (Pubitemid 350074878)
15. 3 thin film prepared by gallium evaporation in oxygen plasma, Extended Abstracts, The 55th Spring Meeting, 2008, The Japan Society of Applied Physics, 28a-M-2 (in Japanese).
16. 2 gases, Extended Abstracts, The 69th Autumn Meeting, 2008, The Japan Society of Applied Physics, 3a-Q-7 (in Japanese).
17. 3 and GaN on sapphire substrate and lift-off using ZnO layer, Extended Abstracts, The 56th Spring Meeting, 2009, The Japan Society of Applied Physics, 31a-ZK-9 (in Japanese).
18. 3 interlayer Journal of the Electrochemical Society 158 11 2011 H1172 H1178
19. 3 (010) substrates Applied Physics Letters 100 2012 013504
20. 3 single crystals and wafers Journal of Crystal Growth 270 2004 420 426
21. W.A. Melton, and J.I. Pankove GaN growth on sapphire Journal of Crystal Growth 178 1997 168 173 (Pubitemid 127393872)
22. M. Kasuga, M. Mochizuki, K. Kobayashi, and A. Shimizu New epitaxial relationships of single-crystal zinc oxide on sapphire Japanese Journal of Applied Physics 19 1980 2289 2290
23. P. Fons, K. Iwata, A. Yamada, K. Matsubara, S. Niki, K. Nakahara, T. Tanabe, and H. Takasu Uniaxial locked epitaxy of ZnO on the a face of sapphire Applied Physics Letters 77 2000 1801 1803