SCOPUS 정보 검색 플랫폼

Volumn 552, Issue , 2014, Pages 18-23

Crystallization mechanism of silicon quantum dots upon thermal annealing of hydrogenated amorphous Si-rich silicon carbide films

(4) Wen, Guozhi a,b Zeng, Xiangbin a Liao, Wugang a Cao, Chenchen a

a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

b WUHAN POLYTECHNIC UNIVERSITY (China)

Author keywords

Bonding Configuration; Crystallization Mechanism; Plasma Enhanced Chemical Vapor Deposition; Quantum Dots; Silicon; Silicon carbide; Transmission Electron Microscopy

Indexed keywords

ANNEALING TEMPERATURES; BONDING CONFIGURATIONS; CRYSTALLIZATION MECHANISMS; CRYSTALLIZATION PROCESS; ELECTRON IMPACT REACTIONS; HYDROGENATED SILICON; SILICON CARBIDE FILMS; SILICON QUANTUM DOTS;

AMORPHOUS FILMS; ANNEALING; HYDROGENATION; MICROSTRUCTURAL EVOLUTION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR QUANTUM DOTS; SILICON; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

AMORPHOUS SILICON;

EID: 84892816111 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2013.12.001 Document Type: Article

Times cited : (20)

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